Low-power-consumption reference voltage source applicable to nanoscale CMOS (complementary metal oxide semiconductor) process
A reference voltage source and reference voltage technology, which is applied in the direction of adjusting electrical variables, high-efficiency power electronic conversion, instruments, etc., can solve the problems of high working voltage, increase of circuit temperature coefficient, etc., achieve low power consumption, reduce temperature coefficient, reduce effect of demand
Active Publication Date: 2021-07-13
广东宝元通检测股份有限公司
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This makes the reference voltage source circuit require a higher operating voltage and is more susceptible to process variation, which in turn increases the temperature coefficient of the circuit
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[0012] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are given in the description and drawings, but the present invention can be implemented in many different forms and is not limited to the embodiments described in the description. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.
[0013] It should be noted that when a certain element is fixed to another element, it includes directly fixing the element to the other element, or fixing the element to the other element through at least one other element in the middle. When an element is connected to another element, it includes directly connecting the element to the other element, or connecting the element to the other element throu...
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The invention provides a low-power-consumption reference voltage source applicable to a nanoscale CMOS (complementary metal oxide semiconductor) process. The low-power-consumption reference voltage source comprises a compensation current generating circuit and a reference voltage generating circuit. Through circuit structure arrangement, MOS transistors in the circuit all work in a weak inversion region, the requirement of the circuit for working voltage is reduced, and low power consumption of circuit work is achieved. Through the first-order current and second-order current compensation technology, the gate-source voltage of the MOS tube working in the weak inversion region in the circuit is basically not affected by temperature change and process deviation and is output as the reference voltage, and the temperature coefficient of the reference voltage output by the circuit is effectively reduced.
Description
technical field [0001] The invention relates to the design of a reference voltage source circuit system, in particular to the design of a low-power reference voltage source suitable for nanoscale CMOS technology. Background technique [0002] With the application of nano-scale CMOS manufacturing technology in the production of integrated circuits, the integrated scale of integrated circuits has been increasing and the volume has been continuously reduced, but it has also brought many problems in circuit performance. When the reference voltage source circuit is designed and produced under the nano-scale CMOS manufacturing process, the MOS transistor in the circuit usually has a larger conductive channel length, and the leakage current of the MOS transistor increases, and the output impedance decreases. This makes the reference voltage source circuit require a higher operating voltage and is more susceptible to process variations, thereby increasing the temperature coefficient...
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Login to View More IPC IPC(8): G05F1/567
CPCG05F1/567Y02B70/10
Inventor 代晶
Owner 广东宝元通检测股份有限公司