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Selective nitrided gate-oxide for rts noise and white-pixel reduction

A gate oxide, pixel technology, used in the field of image sensors

Pending Publication Date: 2021-07-13
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Combined with the need for image sensors with high dynamic range and low light sensitivity, the design of pixel cells with high conversion gain and high signal-to-noise ratio has become increasingly challenging

Method used

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  • Selective nitrided gate-oxide for rts noise and white-pixel reduction
  • Selective nitrided gate-oxide for rts noise and white-pixel reduction
  • Selective nitrided gate-oxide for rts noise and white-pixel reduction

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Embodiment Construction

[0018] A device and method relating to a pixel unit having a nitrogen implant region at a semiconductor material-gate oxide interface above a region above a photodiode is disclosed. Many specific details are set forth in the following description to provide a thorough understanding of the embodiments. However, those skilled in the art will recognize that the techniques described herein may be practiced in the case of no one or more specific details or other methods, components, materials, and the like. In other cases, the well-known structures, materials or operations are not shown or described in detail to avoid blurring certain aspects.

[0019] The references to "an example" or "one embodiment" reference referred to in this specification meant in conjunction with the particular features, structures, or characteristics described in the examples. Therefore, the phrase "in one example" in various places in this specification is "in one embodiment" is not necessarily referring to t...

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Abstract

The invention relates to a selective nitrided gate-oxide for RTS noise and white-pixel reduction. A pixel cell includes a nitrogen-implanted region at a semiconductor material-gate oxide proximate interface located in a region above a photodiode. The pixel cell is further devoid of implanted nitrogen in channel regions of a plurality of pixel transistors. Thus, Si-N bonds are formed at the semiconductor material-gate oxide interface in the region above the photodiode, while the channel regions are protected from nitrogen implantation at the semiconductor material-gate oxide interface. Methods of forming the pixel cell are also described.

Description

Technical field [0001] The present disclosure generally relates to an image sensor, and in particular, it is particularly non-row-to-use pixel units having a selective nitride gate oxide region. Background technique [0002] The CMOS Image Sensor (CIS) is now everywhere. They are widely used in digital cameras, mobile phones, security cameras, and medical, cars and other applications. A typical image sensor is operated in response to image light reflected from an external scene on an image sensor. The image sensor includes a pixel array having a photosensitive element (e.g., a photodiode), the photosensitive element absorbed a portion of the incident image light and generates an image charge when absorbing the image light. The image charge of each pixel can be measured as an output voltage of each of the photosensitive elements, which varies depending on the incident image. In other words, the amount of image charge generated is proportional to the intensity of the image light, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/374H04N5/378
CPCH01L27/14689H01L27/14614H01L27/14616H04N25/76H04N25/63H04N25/78H01L27/14641H01L27/14643H01L29/513H01L27/14603H04N25/75
Inventor 文成烈
Owner OMNIVISION TECH INC