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Back lining type high-frequency broadband PMUT unit and PMUT array

A backing and high-frequency technology, which is applied in the field of backing-type high-frequency broadband PMUT units and PMUT arrays, can solve problems such as difficult to meet device spacing requirements, difficult to apply high-frequency devices, and inability to effectively form two-dimensional arrays, etc., to achieve expansion Effects of device bandwidth, increased transmit and receive sensitivity, and reduced complexity

Pending Publication Date: 2021-07-16
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this kind of device is difficult to meet the requirements of device spacing, cannot effectively form a two-dimensional array, and is difficult to apply to high-frequency devices

Method used

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  • Back lining type high-frequency broadband PMUT unit and PMUT array
  • Back lining type high-frequency broadband PMUT unit and PMUT array
  • Back lining type high-frequency broadband PMUT unit and PMUT array

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Such as figure 1 As shown, the present embodiment provides a backing-type high-frequency broadband PMUT unit, including a substrate 1, an electrical isolation layer 2, a lower electrode 3, a piezoelectric layer 4, an upper electrode 5, a passivation layer 6 and leads stacked in sequence In the layer 7 , a blind hole type cavity is opened axially upward from the bottom of the base 1 to form a back cavity, and the back cavity is filled with a backing material 8 .

[0033] The base 1 includes an SOI substrate, and the SOI substrate includes a support layer 11 , a buried oxide layer 12 and a device layer 13 sequentially from the bottom to the top. The blind hole type cavity is opened on the support layer 11 , penetrating from the bottom of the support layer 11 to the top of the support layer 11 and reaching below the buried oxide layer 12 .

[0034] The electrical isolation layer 2 includes silicon oxide, and the piezoelectric material of the piezoelectric layer 4 includes...

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PUM

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Abstract

The invention relates to a backing type high-frequency broadband PMUT unit and a PMUT array, the PMUT unit comprises a substrate (1), an electrical isolation layer (2), a lower electrode (3), a piezoelectric layer (4), an upper electrode (5), a passivation layer (6) and a lead layer (7) which are laminated in sequence, the substrate (1) is upwards provided with a blind hole type cavity from the bottom of the substrate along the axial direction to form a back cavity, and the back cavity is filled with a backing material (8). The PMUT array comprises a plurality of PMUT units which are sequentially arranged according to rows and columns. Compared with the prior art, the backing structure provided by the invention can improve the bandwidth of the PMUT array by more than one time, and simultaneously meets the requirement of a phased array on the unit spacing.

Description

technical field [0001] The invention relates to the technical field of ultrasonic transducers, in particular to a backing type high-frequency broadband PMUT unit and a PMUT array. Background technique [0002] Ultrasonic transducers are an effective, inexpensive, and radiation-free non-destructive testing technique. Devices widely used in the following industries: non-destructive testing (NDT), speed detection, industrial automation, object recognition, collision avoidance systems, and medical imaging. [0003] Compared with bulk sensors, Micromachined Ultrasonic Transducer (MUT) based on MEMS technology has the advantages of easy large-scale processing and easy arraying, and has broad prospects in the field of high-resolution ultrasonic imaging. [0004] MUT devices are mainly divided into CMUT (capacitive ultrasonic transducer) based on capacitance principle and PMUT (piezoelectric ultrasonic transducer) based on piezoelectric principle. Compared with CMUT, PMUT has the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02
CPCB81B7/02B81B2201/0271
Inventor 周嘉王续博刘安任俊彦马有草
Owner FUDAN UNIV
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