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Schottky diode and manufacturing method thereof

A Schottky diode and anode layer technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of not meeting the actual needs, increasing the leakage characteristics of heterogeneous structure layers, etc., and achieve the suppression of leakage characteristics, The effect of improving device performance

Pending Publication Date: 2021-07-16
ENKRIS SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the anode layer of the current Schottky diode is directly formed on the heterostructure layer, which increases the leakage characteristics of the heterostructure layer in high temperature environments, which does not meet the actual needs.

Method used

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  • Schottky diode and manufacturing method thereof
  • Schottky diode and manufacturing method thereof
  • Schottky diode and manufacturing method thereof

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Embodiment Construction

[0049] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with aspects of the present application as recited in the appended claims.

[0050] The terminology used in this application is for the purpose of describing particular embodiments only, and is not intended to limit the application. As used in this application and the appended claims, the singular forms "a", "the", and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that the term...

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Abstract

The invention relates to a Schottky diode and a manufacturing method thereof. The Schottky diode comprises: a nitride channel layer; a nitride barrier layer formed on the nitride channel layer; a nitride cap layer formed on the nitride barrier layer, and comprising an active region and a non-active region; a passivation layer which is formed on the nitride cap layer, wherein the passivation layer comprises a first groove, the first groove penetrates through the passivation layer and exposes the nitride cap layer, and the first groove corresponds to the activation region; a dielectric layer which is located on the passivation layer and the inner wall of the first groove, wherein a second groove is defined by the dielectric layer, the dielectric layer comprises a third groove, and the third groove penetrates through the dielectric layer and exposes a part of the activated region on the nitride cap layer; and an anode layer which is formed in the second groove and the third groove, and is in contact with the activation region.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a Schottky diode and a manufacturing method thereof. Background technique [0002] Based on the advantages of high switching frequency and forward voltage drop of Schottky diodes, it has been widely used, and can gradually replace the application of silicon in high-power semiconductor devices. However, the anode layer of the current Schottky diode is directly formed on the heterostructure layer, which increases the leakage characteristics of the heterostructure layer in a high temperature environment, which does not meet actual needs. Contents of the invention [0003] The present application provides a Schottky diode and a manufacturing method thereof, so as to solve the deficiencies in related technologies. [0004] According to a first aspect of an embodiment of the present application, a Schottky diode is provided, including: [0005] Nitride channel laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/335
CPCH01L29/872H01L29/0603H01L29/0684H01L29/66143H01L29/205H01L29/2003H01L29/66212H01L29/417
Inventor 程凯
Owner ENKRIS SEMICON
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