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Amplifier for switching tube body bias and follower

An amplifier and follower technology, applied in the field of electronic devices, can solve the problem of parasitic PN junction conduction and other problems

Active Publication Date: 2021-07-16
SG MICRO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the transfer characteristics of the amplifier are not linear in the entire voltage range, when the input voltage is close to 0, the output voltage of the amplifier is greater than the input voltage, therefore, when the source terminal voltage of the switch tube is close to 0, the body bias circuit provides The body bias voltage of the switch is greater than the source voltage of the switch, which may still lead to the conduction of the parasitic PN junction

Method used

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  • Amplifier for switching tube body bias and follower
  • Amplifier for switching tube body bias and follower
  • Amplifier for switching tube body bias and follower

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Embodiment Construction

[0030] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be implemented in different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention.

[0032] Hereinafter, the present invention will be described in detail with reference t...

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Abstract

The invention discloses an amplifier for switching tube body bias and a follower. The amplifier comprises: a current source for providing a constant current; a current mirror connected to the current source, the current mirror having a first current branch and a second current branch coupled to each other; a non-inverting input end and a inverting input end which are respectively used for controlling the first current of the first current branch and the second current of the second current branch; and a limiting transistor which is located on the second current branch circuit, wherein the limiting transistor is of a first type, receives a fixed bias voltage and is used for limiting the second current, so that the output voltage is maintained to be smaller than or equal to the input voltage when the input voltage is close to zero voltage, or when the input voltage is close to the power supply voltage, the output voltage is maintained to be greater than or equal to the input voltage. The amplifier can obtain a transfer characteristic meeting a body bias condition.

Description

technical field [0001] The invention relates to the technical field of electronic devices, and more specifically, to an amplifier and a follower used for biasing a switching tube body. Background technique [0002] The body effect of the switch tube is the change of the threshold voltage (Vth) of the switch tube caused by the voltage difference between the source and the body region. The body effect can be suppressed by using body bias in the switch tube. For example, the body bias circuit is connected to the body region of the switch tube to provide a body bias voltage (body bias), thereby suppressing the influence of the potential of the body region on the threshold voltage of the switch tube, thereby reducing the value of the on-resistance and reducing the conduction voltage. On-resistance fluctuates with source voltage. The body bias voltage needs to be selected as an appropriate magnitude to avoid the leakage current caused by the conduction of the parasitic PN juncti...

Claims

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Application Information

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IPC IPC(8): H03F3/16
CPCH03F3/165
Inventor 满雪成
Owner SG MICRO
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