Gas supply device for crystal growth furnace

Abstract

The invention discloses a gas supply device for a crystal growth furnace. The gas supply device comprises a plurality of gas supply units for supplying gas to a crystal growth cavity of the crystal growth furnace, wherein each gas supply unit comprises a gas source, a first gas channel and a second gas channel, a first flow control unit is arranged on the first gas channel, and a second flow control unit is arranged on the second gas channel; and each gas source communicates with a gas path of the crystal growth cavity through the first gas channel and the first flow control unit corresponding to the gas source, each gas source communicates with the gas path of the crystal growth cavity through the second gas channel and the second flow control unit corresponding to the gas source, and when one of the first flow control unit and the second flow control unit is in an abnormal working state, the gas source provides required gas for the crystal growth cavity through the gas path where the other one of the first flow control unit and the second flow control unit is located. The gas supply device for the crystal growth furnace disclosed by the invention can reliably supply required gas to the crystal growth cavity according to process requirements, and has the advantages of stable gas supply, automatic troubleshooting capability and the like.

Description

Technical field [0001] The present application is a long crystal industry technology, in particular, relates to a long crystal furnace gas supply device. Background technique [0002] It is well known that silicon carbide is one of the third-generation semiconductor materials, which has a wide range of electronic mobility, high breakdown intensity, high thermal conductivity, and is widely used in power electronics, radio frequency devices. Optoelectronic device and other fields. [0003] The existing silicon carbide crystal growth is used to use a physical gas phase transportation method (PVT) to achieve silicon carbide production, and the long crystal furnace needs to perform a long crystal process during the long crystal process. Down. In addition, in the actual production process, the applicant finds that there is a need to use a variety of special gas during long crystal, the pureness of each special gas, into the crystal growth chamber, into the crystal Factors such as mixed...

AI Technical Summary

Problems solved by technology

In addition, the gas supply device of the crystal growth furnace often needs to monitor and control the flow provided by the crystal growth chamber through the gas flow controller. However, in the actual production process, the failure of the gas flow controller occurs from time to time. In addition, the gas path design of the gas supply device of the crystal growth furnace is unreasonable, which directly or indirectly leads to the generation of defects such as crystal inclusions, micropipes, and dislocations, which seriously affects the quality of the crystal growth and the qualified rate of finished products, and affects the actual Production has caused great trouble

[0004] In addition, when the flow controller fails, the traditional crystal growth furnace gas supply device needs to wait for the shutdown of the furnace before the flow controller can be replaced; as a result, as long as the flow controller fails, the quality of the crystal growth will definitely be affected

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