Static parameter testing system and method, electronic equipment and storage medium

A static parameter and test system technology, applied in the direction of measuring electricity, measuring electrical variables, measuring current/voltage, etc., can solve the problems of complex structure of the test system, inaccurate measurement results, heavy quality, etc., and achieve low distribution parameters of printed boards Effect

Pending Publication Date: 2021-07-27
CHINA ELECTRONICS STANDARDIZATION INST
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  • Description
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  • Application Information

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Problems solved by technology

[0007] In view of the above technical problems, this application proposes a static parameter testing system, method, electronic equipment and storage medium to solve the problem of large differences in measurement results, inaccurate measurement results, and The problem of complex structure, large volume and heavy weight of the test system

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  • Static parameter testing system and method, electronic equipment and storage medium
  • Static parameter testing system and method, electronic equipment and storage medium

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Embodiment Construction

[0043]The application proposes a static parameter testing system, method, electronic equipment and storage medium to solve the static parameter measurement system of solid-state microwave power devices in the prior art. There are large differences in results, inaccurate measurement results, complex structure of the test system, large volume, and heavy weight. This application can be directly used to measure the static parameters of solid-state microwave power devices such as GaN, GaAs, and SiC, including the gap between the gate and the source. Pinch-off voltage VGSoff, leakage current IGSS between gate and source, drain saturation current IDSS, transconductance gm, etc.

[0044] In the first aspect, the application proposes a static parameter test system for measuring static parameters of solid-state microwave power devices, such as figure 1 As shown, it includes: at least one measurement module in the first measurement module, the second measurement module, the third measure...

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Abstract

The invention relates to a static parameter testing system and method, electronic equipment and a storage medium, and the system comprises at least one of a first measurement module, a second measurement module, a third measurement module, a fourth measurement module, a fifth measurement module and a sixth measurement module. The first measuring module, the second measuring module, the third measuring module, the fourth measuring module, the fifth measuring module and the sixth measuring module are connected with a measuring clamp through a switching module, and the first measuring module, the second measuring module, the third measuring module, the fourth measuring module, the fifth measuring module and the sixth measuring module are connected through a bus. The problems that in the prior art, a solid-state microwave power device static parameter measuring system is inaccurate in measuring result, complex in testing system structure, large in size and heavy in mass are solved.

Description

technical field [0001] The invention relates to the field of test and measurement, in particular to a static parameter test system, method, electronic equipment and storage medium. Background technique [0002] At present, the performance of traditional Si and GaAs semiconductor devices is close to the theoretical limit determined by the material itself. Semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have wide Through the advantages of electric field and other advantages, it has become an ideal material for the development of high-power, high-frequency, high-temperature and radiation-resistant electronic devices. The GaN material series has low heat generation rate and high breakdown electric field, and is suitable for the development of radiation-resistant, high-frequency, high-density integrated electronic devices. Semi-insulating SiC single crystal material has become the best substrate for preparing wide-bandgap solid-state microwave dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R19/00
CPCG01R31/2601G01R19/00
Inventor 刘冲张珊曹玉峰李洁阚劲松
Owner CHINA ELECTRONICS STANDARDIZATION INST
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