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Semiconductor package component, base substrate for RF transistor, and manufacturing method thereof

A technology of radio frequency transistors and base substrates, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as limitations in impedance matching, and achieve excellent reliability

Pending Publication Date: 2021-07-30
AMOSENSE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, in conventional base substrates for RF power transistors, the metal base is formed as a flat plate, and there are limitations in impedance matching when wire bonding the transistors.

Method used

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  • Semiconductor package component, base substrate for RF transistor, and manufacturing method thereof
  • Semiconductor package component, base substrate for RF transistor, and manufacturing method thereof
  • Semiconductor package component, base substrate for RF transistor, and manufacturing method thereof

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Embodiment Construction

[0058] For a full understanding of the invention, its operational advantages, and objects achieved by its practice, reference should be made to the accompanying drawings which illustrate preferred embodiments of the invention and to the accompanying drawings.

[0059] In describing the preferred embodiments of the present invention, descriptions of well-known techniques or repeated descriptions that may unnecessarily obscure the gist of the present invention are reduced or omitted.

[0060] figure 1 It shows the semiconductor package element of this invention. like figure 1 As shown, the semiconductor package device 100 of the present invention may include: a base substrate 10 ; a ceramic layer 20 formed on the upper portion of the base substrate 10 ; and a lead frame 30 formed on the upper portion of the ceramic layer 20 . In addition, in the semiconductor package device 100 of the present invention, the protrusion 40 may be formed on the upper portion of the base substrate...

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Abstract

The present invention relates to a semiconductor package component and a semiconductor package including the same. More specifically, the present invention relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same. Even more particularly, the present invention relates to a semiconductor package component for an RF power transistor, in which a die chip and a lead frame are connected to each other with a wire, such that the length of the wire is reduced by the protruding height of a base substrate, and consequently impedance matching of the RF transistor can be adjusted; and to a semiconductor package including the same.

Description

technical field [0001] The present invention relates to a semiconductor package element, a base substrate for a radio frequency transistor and a manufacturing method thereof. More specifically, it relates to a base substrate for a radio frequency transistor on which protrusions are formed and a method for manufacturing the same. In more detail, it relates to a semiconductor package element, a base substrate for a radio frequency transistor, and a manufacturing method thereof, wherein a die chip and a lead frame are connected by a wire so that the length of the wire is reduced as much as the height of the protrusion of the base substrate , the impedance matching adjustment of the RF transistor can be carried out. Background technique [0002] Semiconductor packaged RF power devices typically include a die chip mounted on a substrate and mounted within a semiconductor package. The radio frequency input signal is provided to the transistor through the radio frequency input li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/66H01L23/13H01L23/14H01L23/373H01L23/498H01L23/00H01L29/66
CPCH01L2224/48091H01L2224/73265H01L23/66H01L23/047H01L23/3736H01L23/3735H01L2223/6644H01L2223/6611H01L2223/6655H01L24/48H01L2924/00014H01L2224/48247H01L2924/13091H01L2924/13062H01L24/73H01L2224/45099H01L2924/00H01L21/4821H01L23/15H01L23/49575H01L23/53228
Inventor 李志炯
Owner AMOSENSE
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