High-temperature sintering equipment for ceramic substrate and sintering method of high-temperature sintering equipment

Abstract

The invention discloses high-temperature sintering equipment for a ceramic substrate. The high-temperature sintering equipment comprises a box body device, a heating device is arranged on the box body device, a temperature detection device is used for monitoring the temperature in the box body device, the temperature detection device is electrically connected with the heating device, and a substrate bearing device is arranged at the bottom of the box body device; the substrate bearing device comprises a substrate bearing part, the substrate bearing part comprises a frame, the interior of the frame is divided into independent limiting frames by a plurality of mutually perpendicular division plates, a plurality of supporting rods used for bearing the ceramic substrates are arranged in the limiting frames, and all the supporting rods are parallel to one another and arranged at equal intervals; and one ends of the supporting rods are arranged on one side of the frame, the other ends of the supporting rods extend to the outer side of the other side of the frame and are connected with a transmission assembly, the division plates are provided with rotating holes matched with the supporting rods, the transmission assembly is connected with a power assembly, and the power assembly is arranged on the outer side of the box body device. In the sintering equipment, the qualification rate of high-temperature sintering of the ceramic substrate is effectively increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to high-temperature sintering equipment and a sintering method for ceramic substrates. Background technique [0002] Alumina is used as the main material, and glass sintering aids, copper-aluminum alloy nanoparticles, rare earth oxides, solvents, plasticizers, dispersants and binders are added to form a ceramic substrate. In most existing production enterprises, the sintering temperature of the ceramic substrate is controlled below 950°C, because when the ceramic substrate is sintered above 950°C, the ceramic substrate will shrink as the temperature increases, and when the temperature reaches above 1600°C , The ceramic substrate does not continue to shrink, its physical properties reach a higher state, the density remains basically unchanged, and the ceramic substrate has stronger hardness and high temperature resistance. The shrinkage curve and density curve of al...

AI Technical Summary

Problems solved by technology

In a certain environment, the higher the physical properties of the ceramic substrate, the better, but in the sintering process of the prior art, when the sintering temperature of the ceramic substrate exceeds 950 ° C, the ceramic substrate is easy to warp when shrinking and easy to crack due to friction , resulting in the scrapping of a large number of ceramic substrates

like figure 2 Shown is a diagram of deformation or cracking caused by friction and uneven heating when the lower side of the ceramic substrate is sintered on a flat plate in the prior art, where (c) in the figure is before sintering, and (d) in the figure is after sintering of; such as image 3 Shown is the sintering of the needle-point support ceramic substrate in the prior art. The sintering of this method still leads to the unqualified sintering of some ceramic substrates because the lower side of the ceramic substrate is not easy to shrink.

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