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Data analysis method for transient thermal test of semiconductor device

A technology of data analysis and transient heat, which is applied in special data processing applications, material thermal development, complex mathematical operations, etc. It can solve the problems of inability to provide transient simulation, inability to correspond to the physical structure of the device under test, inability to directly provide data, etc. problem, to achieve the effect of intuitive and easy-to-understand measurement results and reduce the difficulty of data analysis

Inactive Publication Date: 2021-08-13
鲁欧智造(山东)高端装备科技有限公司 +1
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  • Application Information

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Problems solved by technology

[0012] The technical problem to be solved by the present invention is to provide a data analysis method for transient thermal testing of semiconductor devices in view of the above deficiencies. Provides a mathematical model for transient simulation, making the measurement results more intuitive and easy to understand, quantitative analysis can be performed, and a mathematical model for simulation calculation can be generated

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  • Data analysis method for transient thermal test of semiconductor device
  • Data analysis method for transient thermal test of semiconductor device
  • Data analysis method for transient thermal test of semiconductor device

Examples

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Embodiment 1

[0049] Example 1, such as figure 1 Shown, a kind of data analysis method of semiconductor device transient heat test, comprises the following steps:

[0050] Step 1. Adopt figure 1 The mathematical modeling of the first-level RthCth model is carried out by using the medium heat resistance and heat capacity model.

[0051] The change of the temperature difference ΔT between the heat source temperature and the ambient temperature with time is the transient thermal response of the system. Formulas 1 to 3 can be obtained by solving the mathematical model.

[0052] Formula 1;

[0053] Formula 2;

[0054] Formula 3;

[0055] The product of Rth and Cth in the index item is called the time constant (in seconds) of the thermal structure of semiconductor products, which is represented by the symbol τ. Because the time constant τ only depends on the physical properties of the thermal structure itself (thermal resistance and heat capacity), and has nothing to do with the input,...

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Abstract

The invention discloses a data analysis method for a transient thermal test of a semiconductor device. The data analysis method comprises the following steps: 1, establishing a first-stage RthCth model by adopting a thermal resistance and thermal capacitance model; 2, performing transient thermal response calculation on the semiconductor product by using a multi-stage RthCth model; and 3, performing convolution operation processing on the data by adopting an RthCth model. The method has the following advantages that the problems that a physical structure of a tested device cannot be corresponded, data for numerical analysis cannot be directly provided, and a mathematical model for transient simulation cannot be provided are solved.

Description

technical field [0001] The invention relates to a data analysis method for transient thermal testing of semiconductor devices, belonging to the technical field of transient thermal testing of semiconductor devices. Background technique [0002] In recent years, with the development of the new energy industry, the use of semiconductors, especially power semiconductor products, has increased significantly, and the layout of related industries has been included in my country's 14th Five-Year Plan. At present, the demand for power semiconductors in my country's market has reached hundreds of billions of yuan, and the annual growth rate of demand exceeds 10%. [0003] At the technical level, power semiconductors will generate a lot of heat when they are used, and the chip itself must ensure that the chip temperature does not exceed the upper limit of about 150 degrees, otherwise it will not work, which brings huge challenges to the thermal design of power semiconductor products. ...

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Application Information

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IPC IPC(8): G06F17/15G06F30/20G01N25/20
CPCG01N25/20G06F17/15G06F30/20
Inventor 罗亚非
Owner 鲁欧智造(山东)高端装备科技有限公司