Unlock instant, AI-driven research and patent intelligence for your innovation.

Positive voltage bias light-emitting unit, coaxial semiconductor laser and optical module

A light-emitting unit and semiconductor technology, applied in the field of ROF (RadioOverFiber), can solve the problems of no cost advantage and complex design, and achieve the effect of convenient design, great competitiveness, and reduced volume

Pending Publication Date: 2021-08-13
珠海思开达技术有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, if the old digital optical module solution is used for design, there is no advantage in cost, and the design is complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive voltage bias light-emitting unit, coaxial semiconductor laser and optical module
  • Positive voltage bias light-emitting unit, coaxial semiconductor laser and optical module
  • Positive voltage bias light-emitting unit, coaxial semiconductor laser and optical module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] The examples given below are specific descriptions of the present invention, and it is necessary to point out that the following examples are only used to further illustrate the present invention, and cannot be interpreted as limiting the protection scope of the present invention.

[0054] The descriptions referring to "first", "second", "third", "fourth" etc. in the present invention are for descriptive purposes only, and should not be construed as indicating or implying their relative importance or implying the indicated The number of technical characteristics. Thus, a feature defined as "first", "second", "third" and "fourth" may explicitly or implicitly include at least one of such features.

[0055] At present, the directly modulated broadband coaxial semiconductor lasers on the market are used in the analog field with negative voltage bias. When this kind of laser is used to make an optical module, since the control circuit in the optical module is powered by posi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
lengthaaaaaaaaaa
luminous pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a positivevoltage bias light-emitting unit, which comprises a substrate comprising a top surface and a bottom surface serving as ground, a first bonding pad arranged on the top surface and electrically connected with the bottom surface, and a semiconductor laser diode with the cathode welded to the first bonding pad and the anode metal welding face used for being electrically connected with the positive electrode of the positive voltage bias circuit. Positive voltage bias is adopted. The invention further discloses a coaxial semiconductor laser and an optical module which adopt positive voltage bias and are wide in radio frequency bandwidth.

Description

technical field [0001] The invention belongs to the technical field of ROF (Radio Over Fiber), and in particular relates to a positive voltage bias light emitting unit, a coaxial semiconductor laser and an optical module. Background technique [0002] The application of ROF technology in mobile communication systems has become the focus of attention. It has various advantages such as rich transmission bandwidth, large capacity, low power consumption, easy installation and maintenance, etc., and can meet the broadband service requirements of 5G mobile communication. At present, China and many developed countries in the world are vigorously deploying 5G mobile communication networks. Although in China, the current commercial frequency is below 6GHz, but in the United States, the frequency of 5G is used in the millimeter wave band. If it is still compatible 2G, 3G and 4G networks, which require a very wide transmission bandwidth. In this case, if the old digital optical module...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02345H01S5/0232H01S5/026
CPCH01S5/0261
Inventor 廖清华何迟光吴喜平付敏陈建国
Owner 珠海思开达技术有限公司
PatSnap Eureka logo

PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.

X (Twitter)LinkedInYouTubeSubstack

© 2026 PatSnap. All rights reserved. 

Terms of Service

 | 

Privacy policy

 | 

Modern Slavery Act Transparency Statement