Light-emitting device, light-emitting device, electronic apparatus, and lighting device
A technology for light-emitting devices and light-emitting materials, applied in the fields of processes, products or compositions, and machines, can solve problems such as insufficient efficiency and high requirements for durability, and achieve the effect of excellent practicability or reliability
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Embodiment approach 1
[0102] In this embodiment, refer to figure 1 The structure of a light emitting device according to one embodiment of the present invention will be described.
[0103] figure 1 It is a figure explaining the structure of the light emitting device which concerns on one aspect of this invention.
[0104]
[0105]The light emitting device 150 described in this embodiment includes an electrode 101, an electrode 102, and a layer 111 (refer to figure 1 ). The light emitting device 150 emits light EL1.
[0106] The layer 111 has a region sandwiched between the electrode 101 and the electrode 102, and the layer 111 includes the luminescent material D, the first material H1 and the second material H2.
[0107] "The First Material H1"
[0108] The first material H1 has a first anthracene skeleton and a substituent R11, the substituent R11 is bonded to the first anthracene skeleton, and the substituent R11 has a heteroaromatic ring.
[0109] For example, a compound having a first a...
Embodiment approach 2
[0180] In this embodiment, refer to figure 1 The structure of the light emitting device 150 according to one embodiment of the present invention will be described.
[0181]
[0182] The light emitting device 150 described in this embodiment includes an electrode 101 , an electrode 102 and a unit 103 .
[0183]
[0184] Unit 103 includes layer 111, layer 112, and layer 113 (refer to figure 1 ). Layer 111 has a region sandwiched between layer 112 and layer 113 . For example, the structure described in Embodiment Mode 1 can be used for the layer 111 .
[0185] "Structural Example of Layer 112"
[0186] Layer 112 has a region sandwiched between electrode 101 and layer 111 . Preferably, a substance whose bandgap is larger than that of the luminescent material contained in layer 111 is used for layer 112 . Therefore, energy transfer from excitons generated in layer 111 to layer 112 can be suppressed. In addition, for example, a material having hole transport properties ca...
Embodiment approach 3
[0213] In this embodiment, refer to figure 1 The structure of the light emitting device 150 according to one embodiment of the present invention will be described.
[0214]
[0215] The light emitting device 150 described in this embodiment includes an electrode 101 , an electrode 102 , a unit 103 , a layer 104 and a layer 105 . For example, the configuration described in Embodiment Mode 2 can be used for the unit 103 .
[0216] "Structure example of electrode 101"
[0217] Metals, alloys, conductive compounds, mixtures thereof, and the like can be used for the electrode 101 . For example, a material having a work function of 4.0 eV or higher can be suitably used.
[0218] For example, indium oxide-tin oxide (ITO: Indium Tin Oxide, indium tin oxide), indium oxide-tin oxide (ITSO) containing silicon or silicon oxide, indium oxide-zinc oxide, tungsten oxide and zinc oxide can be used. Indium oxide (IWZO), etc.
[0219] In addition, for example, gold (Au), platinum (Pt), n...
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Abstract
Description
Claims
Application Information
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