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Silicon-based detector and manufacturing method thereof

A manufacturing method and detector technology, applied in the field of semiconductor detection, can solve the problems that semiconductor factories and research institutions are difficult to realize, and achieve the effects of improving depletion voltage and breakdown voltage, high gain, and increasing depth

Active Publication Date: 2021-08-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is difficult for conventional semiconductor factories and research institutions to achieve

Method used

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  • Silicon-based detector and manufacturing method thereof
  • Silicon-based detector and manufacturing method thereof
  • Silicon-based detector and manufacturing method thereof

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Embodiment Construction

[0022] An exemplary embodiment of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown, it is understood that the present disclosure can be implemented in various forms without limitation. Instead, these embodiments are provided to be more thoroughly understood to disclose the present disclosure, and can communicate the scope of the present disclosure to those skilled in the art.

[0023] Figure 1I A portion longitudinal cross-sectional view of a silicon-based detector is shown in the present invention.

[0024] refer to Figure 1I As shown, a device structural layer is formed on the substrate 1000.

[0025] In an embodiment of the invention, the substrate 1000 can be a p-type high-doped substrate, and the doped concentration can be in 1e18 ~ 1e21cm. -3 In the range.

[0026] Continue reference Figure 1I As shown, the absorbing layer 1007, the gain layer 100...

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Abstract

The invention provides a silicon-based detector and a manufacturing method thereof. The silicon-based detector comprises a substrate and a device structure layer arranged on the substrate, and the device structure layer comprises an absorption layer, a gain layer, a first charge layer, a second charge layer and a contact layer which are sequentially arranged upwards in the direction perpendicular to the plane of the substrate; the device structure layer further comprises an annular junction region, and the annular junction region is located above the absorption layer and sleeves the outer sides of the edges of the gain layer, the first charge layer, the second charge layer and the contact layer. The annular junction region is different from the absorption layer, the first charge layer and the second charge layer in doping type. According to the silicon-based detector, the depth of the gain region can be effectively increased by introducing the second charge layer, the depletion voltage and the breakdown voltage of the device are improved, proper gain and higher time resolution are obtained, and meanwhile, the dependence of the detector on extreme processes and equipment such as high-energy ion implantation can be reduced.

Description

Technical field [0001] The present invention relates to the field of semiconductor detection, and more particularly to a silicon-based detector and a method of fabricating thereof. Background technique [0002] At present, the avalanche detector based on silicon-based P-I-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N-N isas [0003] The low gain avalanche detector has a large number of avalanche (5 ~ 20), high time resolution (30ps), making it a good choice for ultra-high time distinguish. However, it is necessary to obtain the right gain and higher time resolution to strictly control the position of its absorbent zone and the gain zone, which puts higher requirements for the preparation process and equipment, such as the high energy ion implantation process (> 1 MeV) A deeper gain zone is achieved to obtain a suitable exhaustive voltage and breakdown vol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/0352H01L31/18
CPCH01L31/107H01L31/0352H01L31/1804Y02P70/50
Inventor 许高博翟琼华丁明正傅剑宇孙朋殷华湘颜刚平田国良
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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