Manufacturing method of embedded graphene diode

A manufacturing method and graphene technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as excessive electrode current, PN junction breakdown, and unfavorable normal operation of diodes, so as to improve breakdown voltage, The effect of preventing breakdown

Inactive Publication Date: 2021-08-27
山东傲天环保科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Although the previous diode with mosaic graphene PN junction structure can achieve a larger junction area, the electrode with a smaller area will cause the current density flowing through the electrode to be uneven, resulting in excessive current in some electrodes, resulting in a large number of heat, may cause part of the PN junction to be broken down
A larger electrode will affect the electron migration in the junction region, which is not conducive to the normal operation of the diode.

Method used

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  • Manufacturing method of embedded graphene diode
  • Manufacturing method of embedded graphene diode
  • Manufacturing method of embedded graphene diode

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Embodiment Construction

[0026] The mosaic graphene diode according to the disclosed embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0027] As previously mentioned, the present invention provides a method for manufacturing a mosaic graphene diode, comprising:

[0028] (1) provide a copper substrate;

[0029] (2) depositing a nickel metal layer on the copper substrate;

[0030] (3) forming a first mask layer on the nickel metal layer, the first mask layer having a plurality of first openings arranged in an array;

[0031] (4) Doping the nickel metal layer with first-type ions through the first mask layer to form first-type regions corresponding to a plurality of first openings;

[0032] (5) remove the first mask layer, and form a second mask layer on the nickel metal layer, the second mask layer exposes other parts of the nickel metal layer except the first type region area;

[0033] (6) Doping the nickel metal layer with second-...

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Abstract

The invention provides a manufacturing method of an embedded graphene diode. The breakdown voltage of the diode is improved by designing the area ratio of the first graphene region to the second graphene region and the ratio of the total area of the electrodes to the total area of the graphene regions, and meanwhile it can be guaranteed that the current density of the first electrode and the current density of the second electrode are close to each other or the same, so that breakdown caused by uneven current is prevented.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor components, in particular to a method for manufacturing a mosaic graphene diode. Background technique [0002] Although the previous diode with mosaic graphene PN junction structure can achieve a larger junction area, the electrode with a smaller area will cause the current density flowing through the electrode to be uneven, resulting in excessive current in some electrodes, resulting in a large number of Heat may cause part of the PN junction to be broken down. However, electrodes with a larger area will affect the electron migration in the junction region, which is not conducive to the normal operation of the diode. Contents of the invention [0003] Based on solving the above problems, the invention provides a method for manufacturing a mosaic graphene diode, comprising: [0004] (1) provide a copper substrate; [0005] (2) depositing a nickel metal layer on the copper ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/04H01L29/861H01L29/06
CPCH01L21/0405H01L29/0611H01L29/6603H01L29/861
Inventor 孙德瑞
Owner 山东傲天环保科技有限公司
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