Double-sided capacitor structure and forming method thereof

Abstract

The invention relates to a double-sided capacitor structure and a forming method thereof. The forming method of the double-sided capacitor structure comprises the following steps: providing a base substrate which comprises a substrate, a capacitor contact located in the substrate, a laminated structure located on the surface of the substrate, and a capacitor hole which penetrates through the laminated structure and exposes the capacitor contact, and the laminated structure comprises sacrificial layers and supporting layers which are alternately stacked in the direction perpendicular to the substrate; sequentially forming a first electrode layer, a first dielectric layer and a second electrode layer on the inner wall of the capacitor hole; filling a first conductive material in the capacitor hole to form a first conductive filling layer; completely removing the plurality of sacrificial layers and / or supporting layers to enable at least two supporting layers to remain; and forming a second dielectric layer and a third electrode layer covering the surface of the second dielectric layer. According to the invention, the risk of electrode collapse and overturning is reduced or even avoided, and the capacitance value of the capacitor is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a double-sided capacitor structure and a forming method thereof. Background technique [0002] A dynamic random access memory (Dynamic Random Access Memory, DRAM) is a semiconductor structure commonly used in electronic devices such as computers, and is composed of a plurality of storage units, and each storage unit usually includes a transistor and a capacitor. The gate of the transistor is electrically connected to the word line, the source is electrically connected to the bit line, and the drain is electrically connected to the capacitor. The word line voltage on the word line can control the opening and closing of the transistor, so that the stored data can be read through the bit line. Data information in the capacitor, or write data information into the capacitor. [0003] As semiconductor devices shrink in size, their lateral area on a substrate decrea...

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Problems solved by technology

[0006] The invention provides a double-sided capacitor structure and its forming method, which are used to solve the problem of poor lateral stability of the existing capacitor array region, so as to improve the performance stability of semiconductor devices

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