111 results about "Areal capacitance" patented technology

A surface capacitance touch sensitive surface (or “surface cap panel”) suitable for use in a touch screen or touchpad, wherein the surface cap panel has a substantially even coating of a conductive material on a non-conductive substrate and then covering the conductive material with a dielectric material, wherein a novel current measuring circuit reduces the effect of stray capacitance on the accuracy of a current measurement so that the relative X and Y position of an object on the surface cap panel can be determined using simple ratio equations, and wherein measuring the charge transfer rate in a measuring circuit, in addition to the total charge transfer for each toggle event, enables the location of two objects to be identified on the surface cap panel, wherein the charge transfer rate is used to determine the distance between two points of contact on the surface cap panel, and wherein height and width information related to the distance between the two points of contact can now be determined by doubling the number of electrodes at the corners of the surface cap panel.

The present invention provides an oil liquid quality parameter detection method which is as follows: first, a sensing device first sensing signal when no magnetic field is in a to-be-tested oil liquid and a sensing device second sensing signal when a magnetic field is in the to-be-tested oil liquid are obtained, wherein a sensing device sensing end surface is placed in the to-be-tested oil liquid, a sensing device comprises a planar capacitive or quartz crystal microbalance, and the sensing signals comprise capacitance value signals or vibration signals; oil liquid quality parameters can be calculated by a predetermined algorithm according to the first sensing signal and the second sensing signal, wherein the oil liquid quality parameters comprise at least one of dielectric constant, moisture content, pH, acid the total amount of acid oxidizing materials and ferromagnetic particle content. Compared with the prior art, the above five oil liquid quality parameters can be fast calculated in real time only by use of the planar capacitive or quartz crystal microbalance, and the oil liquid quality can be more accurately judged.

The invention relates to a cyclic ceramic dielectric capacitor, which comprises two sets internal electrodes. Every set internal electrode is connected with a terminal electrode and comprises one or more layers conductive films, between the adjacent conductive films that belong to different internal electrodes is ceramic dielectric membrane lay that alternately lap on the internal electrode conductive film; the dielectric membrane and protective layer are laminated into homogeneous capacitor and both present as circularity, conductive films of the two sets internal electrodes are cyclic and the capacitor is cylinder with holes; the terminal electrode comprises outer-ring and inner-ring ones, wherein the metallized films of the inner-ring and outer-ring terminal electrode separately cover on the inner wall of the through-hole and the outer wall of the cylinder.

The invention discloses a method and device for measuring the motion error of five degrees of freedom of a main shaft based on a cylindrical surface capacitor sensor. A stator is arranged at small end of a stepped rotor; four radial electrodes are arranged in the inner cylindrical surface of the stator; four electrodes and the small end of a rotor form four capacitors; and four equally-distributed end face electrodes are arranged on the lateral surface of the stator on one side of the large end face close to the stepped rotor and form another four capacitors with the large end of the rotor. In the measurement process, the rotor and the main shaft to be measured are fixedly connected together and synchronously rotate along the main shaft; the stator is fixedly arranged by a strut member; and the electrodes arranged on the stator and the electrodes on the rotor form capacitors. In the rotating process, when the main shaft radially jumps, axially plays or deflects, parameters of corresponding capacitors are changed and the capacitor values are correspondingly changed; and the motion displacements of the main shaft in the direction of five degrees of freedom in the rotating process can be obtained by measuring the set capacitor values and correspondingly and mathematically calculating the capacitor values. The device has simple structure and low cost.

A touch panel having a substantially even coating of a conductive material on a non-conductive substrate and then covering the conductive material with a dielectric material, wherein a novel current measuring circuit reduces the effect of stray capacitance on the accuracy of a current measurement so that the relative X and Y position of an object on the touch panel can be determined using simple ratio equations.

The invention provides a planar capacitor with high stripping force and high dielectric constant and a preparation method thereof. In a preparation process of the planar capacitor, surface rougheningtreatment is carried out on a metal film, a silane coupling agent layer is added between the metal film and a dielectric layer, the dielectric layer comprises a thermosetting resin polymer capable ofreacting with a silane coupling agent, pressurization and heating are carried out in the curingsnf molding process, and through the improvement of the process, the binding force between the dielectriclayer and the metal film is increased.

The invention discloses a X-Y-Theta displacement direct decoupling measuring device and a method based on plane capacitors. The X-Y-Theta displacement direct decoupling measuring device consists of a moving polar plate and a fixed polar plate, wherein four groups of capacitor-electrode banks which are arranged in a quadrate shape are arranged on the fixed polar plate; four groups of sensing capacitor-electrode banks (eight in total) which are in one-to-one correspondence with the capacitor-electrode banks arranged on the fixed polar plate are arranged on the moving polar plate, and the initial positions of the two capacitor-electrode banks in one group in the corresponding measuring direction have a position difference of one quarter of period, making output signals have a phase difference of 90 degrees; in the process of measurement, when the moving polar plate generates plane displacement relatively to the fixed polar plate, the eight sensing capacitor-electrode banks generate eight capacitance output signals, X-axis and Y-axis plane displacement output signals can be directly decoupled through product-to-sum calculation under small-angle displacement so as to obtain a small angle displacement signal theta. The method can directly decouple to output X-axis and Y-axis displacement signals and the small-angle displacement signal theta, and has a high measuring speed.

A method for heating an energy storage device having a core with an electrolyte, the method including: providing the energy storage device having inputs and characteristics of a capacitance across the electrolyte and the core and internal surface capacitance between the inputs which can store electric field energy between internal electrodes of the energy storage device that are coupled to the inputs; switching between a positive input voltage and a negative input voltage provided to one of the inputs at a frequency sufficient to effectively short the internal surface capacitance of the energy storage device to generate heat and raise a temperature of the electrolyte; and discontinuing the switching when the temperature of the electrolyte is above a predetermined temperature that is considered sufficient to increase a charging efficiency of the energy storage device.

A semiconductor device and a manufacturing method are provided. The semiconductor device includes an active region, a bit line, a capacitor contact, a conductive ring and a storage capacitor. The active region is formed in a substrate. The bit line and the capacitor contact are disposed over the substrate and electrically connected with the active region. The bit line is laterally separated from the capacitor contact, and a top surface of the bit line is lower than a top surface of the capacitor contact. An upper portion of the capacitor contact is surrounded by the conductive ring. The storage capacitor is disposed over and in electrical contact with the capacitor contact and the conductive ring.

The invention provides an adjustable antenna device capable of detecting an approaching object. The adjustable antenna device capable of detecting the approaching object includes a first radiator, a ground portion, a second radiator, a proximity sensing chip, and a variable capacitor. The first radiator comprises a signal feeding point, so that an antenna signal is fed to the first radiator. The variable capacitor and the proximity sensing chip are arranged in the range of the first radiator, the ground portion, and the second radiator, and used to adjust the frequency of the antenna. In addition, a plurality of switches and capacitor adjustment blocks can be used instead of the variable capacitor. The capacitance adjustment blocks and the ground portion are arranged on different surfacesof a circuit board. The areas of the capacitor adjustment blocks are different from each other. Switches are used to selectively electrically connect one of the capacitance adjustment blocks and the second radiator, so as to adjust the frequency of the antenna device. The antenna device provided by the invention can detect the approaching object and adjust the frequency.

The invention provides a flexible electrode material, a preparation method thereof and a flexible supercapacitor. The method comprises the steps: selecting low-melting-point copolyamide and nylon 6 for synchronous electrostatic spinning to obtain a copolyamide/nylon 6 composite nanofiber membrane; then, carrying out hot-pressing treatment to melt the copolyamide to form bonding points so as to obtain a reinforced composite nanofiber membrane; and finally, growing polypyrrole on the reinforced composite nanofibers in an in-situ polymerization mode to obtain a flexible electrode material. The flexible supercapacitor is obtained by assembling the flexible electrode material with PVA-H3PO4 gel electrolyte. Through hot pressing treatment, the copolyamide fibers are melted to form bonding points, the reinforced composite nanofiber membrane with a multi-layer three-dimensional network structure is obtained, and the material is endowed with high conductivity through being compounded with the polypyrrole. The prepared flexible supercapacitor has the advantages of lightness, thinness, good flexibility, relatively high surface capacitance and energy density and the like, and is suitable for preparing a flexible wearable device.

The invention belongs to the related technical field of flexible sensors, and discloses a multifunctional planar capacitive flexible sensor and a preparation method thereof. The flexible sensor comprises a packaging layer, an electrode layer, a substrate layer and a shielding layer which are stacked from top to bottom; the electrode layer comprises at least two electrodes which are arranged at intervals, and the at least two electrodes are mutually nested; and the flexible sensor measures compressive strain and tensile strain through mechanical deformation, and realizes proximity induction of an external conductor based on an edge effect of a capacitor. The structure of the flexible sensor is researched and designed, so that the flexible sensor can realize multifunctional measurement of pressure stress, tensile stress and proximity induction at the same time, and the flexible sensor is simple to prepare and relatively low in cost.

The invention relates to a double-sided capacitor structure and a forming method thereof. The forming method of the double-sided capacitor structure comprises the following steps: providing a base substrate which comprises a substrate, a capacitor contact located in the substrate, a laminated structure located on the surface of the substrate, and a capacitor hole which penetrates through the laminated structure and exposes the capacitor contact, and the laminated structure comprises sacrificial layers and supporting layers which are alternately stacked in the direction perpendicular to the substrate; sequentially forming a first electrode layer, a first dielectric layer and a second electrode layer on the inner wall of the capacitor hole; filling a first conductive material in the capacitor hole to form a first conductive filling layer; completely removing the plurality of sacrificial layers and/or supporting layers to enable at least two supporting layers to remain; and forming a second dielectric layer and a third electrode layer covering the surface of the second dielectric layer. According to the invention, the risk of electrode collapse and overturning is reduced or even avoided, and the capacitance value of the capacitor is increased.

The invention discloses a preparation method of a gate oxide layer of a silicon carbide MOS capacitor. The preparation method comprises the following steps: providing a SiC epitaxial wafer; cleaning the SiC epitaxial wafer; carrying out oxidation treatment on the cleaned SiC epitaxial wafer, forming a SiO2 gate oxide layer of a SiC MOS capacitor on the upper surface of the epitaxial wafer, and forming a lower surface SiO2 oxide layer on the lower surface of the epitaxial wafer; carrying out annealing treatment on the oxidized SiC epitaxial wafer; forming a metal upper electrode on the surfaceof the annealed upper surface SiC MOS capacitor gate oxide layer; and etching the lower surface oxide layer to form a metal lower electrode. By increasing the annealing temperature in the annealing treatment step, the interface defect density and the reliability of the gate oxide layer are optimized, the process is simple, the efficiency is high, and the cost is low.

The invention discloses a rotatable planar electrical capacitance tomography sensor which comprises a planar electrical capacitance measuring electrode array, a substrate, a shielding shell, a sleeve,a fixed end cap, a rotating position indicating sheet and an initial and final position indicating sheet. The planar capacitance measuring electrode array is arranged on the upper plane of the substrate, the lower plane of the substrate is connected with the rotating center shaft, and the rotating center shaft sequentially penetrates through a center hole of the shielding shell and the sleeve andis finally connected with the fixed end cap with the rotating position indicating piece. The electrode array comprises a plurality of fan-shaped outer ring electrodes and inner ring electrodes whichare distributed at equal intervals and formed by taking the center of the substrate as an original point, the fan-shaped outer ring electrodes and the inner ring electrodes are arranged in a staggeredmanner, and gaps are formed between fan-shaped inner arcs of the outer ring electrodes and fan-shaped outer arcs of the inner ring electrodes. The sensor has the beneficial effects that the media with anisotropism of different dielectric constants can be detected, so that the sensitivity is relatively uniformly distributed under different conditions, and the PECT can obtain a relatively good imaging effect in various media.

The invention provides planar capacitor which comprises a first electrode, a second electrode and a dielectric layer. The dielectric layer is positioned between the first electrode and the second electrode; the dielectric constant of the dielectric layer is greater than 100, the first electrode comprises a first conducting layer and a second conducting layer with viscosity, the first conducting layer adheres to the second conducting layer, the second conducting layer adheres to the dielectric layer, the second electrode comprises a third conducting layer and a fourth conducting layer with viscosity, the third conducting layer adheres to the fourth conducting layer, and the fourth conducting layer adheres to the dielectric layer. The dielectric layer of the planar capacitor has a relativelyhigh dielectric constant, so that the difficulty of a production process can be greatly reduced, and the production cost is reduced. The invention further relates to a manufacturing method of the planar capacitor.

The invention discloses a double-sided capacitor structure, a forming method thereof and a DRAM. The forming method of the capacitor structure comprises the following steps: forming a conductive supporting layer on a semiconductor substrate; etching the conductive supporting layer, forming a plurality of capacitor holes in the conductive supporting layer, and taking the conductive supporting layeramong the capacitor holes as one part of an upper electrode of the double-sided capacitor; and forming a double-sided capacitor in the capacitor hole. The conductive supporting layer which has conductive performances is formed, so when the conductive supporting layer is etched by adopting a plasma etching process to form the capacitor hole, the charge accumulation effect caused by using insulating materials such as silicon oxide as a sacrificial layer can be effectively reduced, and the inhibition on high aspect ratio contact etching is reduced, so that the capacitor hole formed in the conductive supporting layer is prevented from generating a conical shape.

The invention discloses a back capacitor structure and a manufacturing method. The method comprises the following steps of arranging a nitride layer on the front of a semiconductor substrate and arranging a hole, directly facing the nitride layer, in the back of the semiconductor substrate, wherein the nitride layer is arranged at the bottom of the hole; arranging first metal layers on the inner wall of the hole and the back of the semiconductor substrate; arranging dielectric layers on the inner wall of the hole and the back of the semiconductor substrate, wherein the dielectric layers coverthe first metal layers; arranging through holes in the dielectric layer above the first metal layers of the semiconductor substrate; and manufacturing a hole in the back of the semiconductor substrate. The capacitor structure in the manufactured hole is capable of greatly improving the capacity area, thereby improving the area utilization rate of an epitaxy structure; the occupied planar space issmaller, so that benefit is provided to reduce the device size; and the back capacitor is manufactured without changing the original manufacturing process, so that the process cost is saved.

The invention discloses a multi-mode rhombic frame type capacitive sensing gesture recognition system. Gesture space capacitance value analysis under a deep learning frame is adopted. A capacitance acquisition module FDC2214 is an anti-noise, anti-EMI, high-resolution, high-speed and multi-channel capacitance-to-digital converter facing a capacitive sensing solution, and the device adopts an innovative anti-EMI architecture, so that the performance can be kept unchanged even in a high-noise environment. Different from a traditional capacitance conversion IC which performs sine wave filtering through an external capacitor and reads a direct-current component to estimate the capacitance value, the FDC2214 obtains the resonant frequency by driving an LC resonant tank. In combination with space capacitance data, a neural network fusion algorithm of space capacitance values and image data is designed, multivariate data is fused, and accurate classification of space gestures in multiple modes is realized. Space capacitance data collection of the rhombic frame type space capacitance sensor is effectively applied to machine learning and deep learning, and the problem of classification of postures in space can be fully solved.