41 results about "Areal capacitance" patented technology

A method of fabricating a system includes fabricating a plurality of transistors and coupling a forming a bridge structure connected between a gate contact of a first transistor with a drain contact of a second transistor. The method further includes fabricating a multi-level memory structure including capacitors that comprise a ferroelectric material or a paraelectric material. The capacitors within a given level are coupled together by a plate electrode. The method further includes forming a signal electrode coupled with the plate electrode.

The present application relates to a kind of coplanar capacitance sensor and defect detection method, belong to coplanar capacitance sensor technical field, solve the technical problem that same coplanar capacitance sensor cannot detect defect of different depth in prior art.The coplanar capacitance sensor of the present application includes: two sets of electrode assemblies arranged on the same plane, two sets of electrode assemblies are oppositely arranged along the first direction;Each electrode assembly includes at least two electrode plates, and the electrode plates of each electrode assembly are spaced apart along the second direction, and the second direction is perpendicular to the first direction, wherein each electrode plate can be independently connected to act as receiving electrode or excitation electrode.Realize the same coplanar capacitance sensor detects defect information of different depth, without replacing sensor, can reduce artificial measurement error, improve detection efficiency and precision accuracy, reduce equipment cost, while it is favorable to improve the stability and quality of signal transmission of coplanar capacitance sensor.

The application relates to a plate material dielectric stability test method and a test system, and relates to the technical field of electromagnetic measurement.The plate material dielectric stability test method comprises the following steps: step 1: a planar capacitive resonance module is attached to the upper surface of a material to be measured, the planar capacitive resonance module comprises a resonance coil and two capacitive plates arranged on the same plane, and the two terminals of the resonance coil are connected to the two capacitive plates in a one-to-one correspondence; step 2: a frequency analyzer reads resonance frequency information through a coupler matched with the planar capacitive resonance module; step 3: the temperature of the material to be measured is measured, the temperature and the characteristic points of the resonance frequency information are compared with a pre-stored parameter comparison table, and the corresponding dielectric constant is obtained as a measured dielectric constant, the parameter comparison table records the corresponding relationship among the temperature, the characteristic points of the resonance frequency information and the dielectric constant; and step 4: the measured dielectric constant is compared with a theoretical dielectric constant.The application can realize nondestructive testing.

The application relates to a coplanar capacitive sensor and an optimization method thereof, and belongs to the technical field of capacitive sensing, and solves the technical problem of poor imaging effect of a single-pair-electrode coplanar capacitive sensor in the prior art. The optimization method of the coplanar capacitive sensor comprises the following steps: changing the shape of adjacent edges of two electrodes, increasing the spacing of a part of positions of the adjacent edges of the two electrodes, and keeping the spacing of another part of positions of the adjacent edges of the two electrodes unchanged, so that an optimized coplanar capacitive sensor is obtained. In the application, by changing the shape of the adjacent edges of the two electrodes, the sensitivity distribution and the detection performance indexes such as the detection depth of the coplanar capacitive sensor are optimized, so that the imaging effect of the coplanar capacitive sensor is improved.

A chip includes a combined capacitor. The combined capacitor includes a frontside capacitor, a backside capacitor, and vertical coupling structures coupling the frontside capacitor and the backside capacitor in parallel.

The application relates to the field of integrated circuit design, and discloses a method, device and equipment for extracting a capacitance value, wherein the method comprises the following steps: determining a combined capacitance matched with each sidewall offset based on the relative position relationship between adjacent first and second metal layers in a pre-generated capacitance query table; wherein the sidewall offset of one side of the two adjacent metal layers represents the offset of a group of sidewalls of one metal layer on the side of another metal layer; calculating the surface capacitance component of the first and second metal layers based on a preset unit surface capacitance and the projection overlap width between the first and second metal layers; and calculating the capacitance value between the first and second metal layers according to the surface capacitance component and the combined capacitance matched with each sidewall offset. The technical scheme provided by the application can improve the extraction efficiency of the parasitic capacitance of the metal layer.

The invention relates to a method and a device adapted for the selective counting of individual respiratory droplets and particles comprising water within ambient air. The method is based on a planar capacitive sensor to which droplets and particles are led with a nozzle, which increases their velocity. Entering the electric field of the capacitive sensor, the respiratory droplets and particles change the sensor's capacitance. Because the respiratory droplets and particles containing water exhibit a notably distinct dielectric constant compared to other airborne particles and the air itself, they are counted in a selective way independently on other particulate matter air pollutants. The alteration in the capacitance is converted into an electrical signal, which is measured by known methods.

The invention discloses a planar capacitor and a preparation method thereof, and relates to the technical field of capacitors. The capacitor assembly is located on the surface of the substrate and comprises a bottom electrode layer, a dielectric layer and a top electrode layer which are sequentially stacked on the surface of the substrate; a capping layer covering the top electrode layer; the interconnection structure comprises a first conductive column and a second conductive column, and the second conductive column penetrates through the covering layer and is in contact connection with the top electrode layer; the first conductive column penetrates through the covering layer, the top electrode layer and the dielectric layer and is in contact connection with the bottom electrode layer; on the plane where the top electrode layer is located, at least part of the covering layer is located between the first conductive column and the top electrode layer. According to the invention, the interconnection structure electrically connected with the electrode layer can be formed without forming a large-size step structure in the capacitor assembly, and the opposite area of the bottom electrode layer and the top electrode layer is increased, so that the capacitance density of the planar capacitor can be improved.

The invention relates to a branching filter. The branching filter is provided with: a common port; a first signal port; a second signal port; a first filter provided between the common port and the first signal port on the circuit structure; a second filter provided between the common port and the second signal port on the circuit structure; a capacitor connecting the first filter and the second filter; and a laminate. The first filter includes a first inductor. The second filter includes a second inductor. The laminated body has a bottom surface and an upper surface located at both ends of the plurality of dielectric layers in the lamination direction. The capacitor is disposed between the first inductor and the second inductor and the bottom surface.

An inverter device includes a housing, a switching element mounted to an inner surface of the housing, a capacitor arranged and mounted along a first direction on the inner surface and connected to the switching element, a first busbar extending along the first direction and connecting the switching element and the capacitor, a second busbar located on a side opposite to the inner surface across the first busbar, extending along the first direction, and connecting the switching element and the capacitor, a first solder mark extending on the first busbar in a second direction intersecting the first direction, and a plurality of second solder marks extending on the second busbar in a direction along the second direction and located on both sides of the first solder mark when viewed in a normal direction of the inner surface.

This invention discloses a cement-based electrode with optimized pore structure based on polyacrylamide, its preparation method, capacitor, assembly method, and applications. It belongs to the field of cement-based functional materials and electrochemical energy storage technology. The cement-based electrode is prepared from the following raw materials: anionic polyacrylamide, conductive nanomaterials, deionized water, KOH solution, and ordinary silicate cement. This invention significantly reduces the charge transfer impedance at the electrode / electrolyte interface by introducing anionic PAM into the cement-based electrode and using a PAM-containing electrolyte for vacuum impregnation, resulting in a more continuous ion transport channel. At the optimal PAM doping level, the areal capacitance at 10 mV / s can be increased by approximately 52%, and the areal capacitance and surface energy density reach a maximum of 136.00 mF / cm², respectively. 2 With 0.0189 mWh / cm 2 This system exhibits a clearly defined optimal performance range, and the doping amount can effectively control the pore structure and electrochemical response. After 8000 cycles, the electrode capacity retention rate still exceeds 60%, demonstrating good long-term cycling stability.

The invention provides a wafer bearing module, a post-processing unit, a post-processing method and processing equipment, the wafer bearing module is used for overturning a wafer in a water environment, the wafer bearing module comprises a bearing bracket, the bearing bracket comprises a driving assembly and a main body, the driving assembly drives the main body to overturn along a driving shaft, a pair of upper limiting parts and a pair of lower limiting parts are arranged on the first surface of the main body at intervals, the upper limiting piece and the lower limiting piece are located on the two sides of the driving shaft and used for limiting and bearing the wafer; the detection assembly comprises a shell and a capacitive proximity switch packaged in the shell, and the capacitive proximity switch outputs a signal according to the variation of the equivalent capacitance on one side of the detection surface so as to determine whether the wafer is in place or not; wherein the detection assembly is installed on the second surface of the main body, the detection face of the capacitive proximity switch faces one side of the first surface and is located between the pair of upper limiting pieces, and the second surface is opposite to the first surface. The wafer bearing module can effectively prevent the manipulator from colliding with the wafer.

The application relates to a ceramic tile hollow detection method and system based on a coplanar capacitor sensor, and belongs to the technical field of hollow detection. The application solves the technical problems of low detection precision and high cost of the existing hollow detection method. The ceramic tile hollow detection method comprises the following steps: a coplanar capacitor sensor is used to scan and detect the surface of a measured ceramic tile to obtain corresponding capacitor data; and whether hollow appears between the measured ceramic tile and a laying surface is determined according to the capacitor data. The application realizes rapid and accurate detection of ceramic tile hollow, and can avoid damage to the ceramic tile.

The invention provides a mixed ACIM and DCIM circuit based on a 1T-nC-1T FeRAM, and belongs to the technical field of novel storage and calculation. The circuit comprises a novel 1T-nC-1T FeRAM device structure, a plurality of ferroelectric capacitors connected in parallel form an nC structure, each ferroelectric capacitor adopts a planar capacitor structure or a three-dimensional cylindrical capacitor structure and forms the nC structure through planar parallel connection or three-dimensional vertical stacking, a top electrode of the nC structure is connected with source electrodes of two transistors to form the 1T-nC-1T structure, and a top electrode of the nC structure is connected with source electrodes of the two transistors to form the 1T-nC-1T structure. A bottom electrode of the nC structure is used as a plate line PL, a grid electrode and a drain electrode of the transistor are respectively used as a word line WL and a bit line BL, and the 1T-nC-1T structure forms a regular array structure in the horizontal direction and the vertical direction; the WL in the 1T-nC array is parallel to the PL, the BL in the 1T-nC array is perpendicular to the PL and is used for parallel computing of the ACIM, and the WL in the nC-1T array is perpendicular to the PL, the BL in the nC-1T array is perpendicular to the PL and is used for row-by-row computing of the DCIM; the method has the advantages of high calculation parallelism and high energy efficiency of the ACIM and high precision and high robustness of the DCIM, and the problem of write crosstalk of an nC structure is solved.

The invention discloses a preparation method of a deep trench capacitor structure based on RDL wiring, and the method comprises the following steps: S1, providing a deep trench capacitor structure which comprises at least two conductive layers with different potentials, and the upper surfaces of the conductive layers are covered by a first interlayer dielectric layer; s2, patterning the first interlayer dielectric layer to form via holes exposing different conductive layers; s3, a first redistribution layer is prepared on the first interlayer dielectric layer, the first redistribution layer comprises two electrode layers which are electrically isolated from each other, the two electrode layers are connected to conductive layers with different potentials respectively, patterns of the at least two electrode layers are alternately arranged on a plane in an interdigital shape or a spiral shape, and the patterns of the at least two electrode layers are arranged on the surface of the first interlayer dielectric layer; therefore, a planar capacitor structure connected in parallel with the deep groove capacitor is formed. According to the invention, the interdigital capacitor is connected in parallel on the basis of the MIM capacitor to form a composite capacitor structure, the advantage of high capacitance density of the DTC is maintained, the equivalent series inductance is reduced, and the working bandwidth of the capacitor is expanded.

The utility model relates to a multi-dimensional force sensor, which is structurally characterized in that a curved surface capacitor is formed by matching bending of a flexible belt with a lower electrode, a circuit board where the lower electrode is located is fixed and pre-pressed by a curved surface, the lower electrode is driven by an elastic cantilever beam to deform to generate capacitance change of each electrode, and three-dimensional force and three-dimensional torque are reflected through the capacitance change. The multi-dimensional force sensor provided by the utility model has the advantages of high sensitivity, strong stability, convenient wiring, simple structure, less calibration or even no calibration, easy calibration and the like, and can supplement six-dimensional force measurement at a facet joint.

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate, and etching a first surface of the substrate to form a plurality of grooves; sequentially forming a lower pole plate, a dielectric layer and an upper pole plate of the trench capacitor in the trench; a first through hole conductive structure is formed above at least part of the grooves, and the first through hole conductive structure is electrically connected to the lower pole plate in the groove below the first through hole conductive structure and is electrically connected with the metal wire located on the second face of the substrate through the lower pole plate; the first through hole conductive structure and the second through hole conductive structure used for being connected with an upper electrode plate of the groove capacitor can be synchronously formed, and plane capacitors can be prepared in parallel while the groove capacitor is formed. According to the invention, through pre-forming and embedding the through hole conductive structure in the groove etching and capacitor preparation stage, the etching depth required by the subsequent top layer through hole can be obviously shortened, the high aspect ratio etching difficulty and the side wall damage risk are reduced, the metal filling is improved, and the interconnection alignment tolerance and yield are improved; and meanwhile, the method is compatible with the existing planar capacitor and rear-end interconnection process, and is beneficial to the reliability and the process stability of the device.

This semiconductor device (100) comprises an element body (10), a capacitor part (30), an inductor part (50), and a first columnar interconnect (81). The capacitor part (30) and the inductor part (50) are located inside the element body (10). A part of the inductor part (50) is located in the same layer as the capacitor part (30) in a direction orthogonal to a first main surface (100A) of the element body (10). The capacitor part (30) comprises an aluminum oxide body (41), a first electrode layer (46), a dielectric layer (48), and a second electrode layer (47). The first electrode layer (46), the dielectric layer (48), and the second electrode layer (47) are layered along the outer surface of the aluminum oxide body (41) on a third positive direction (ZA) side, and along the inner surfaces of a plurality of holes (42) in the aluminum oxide body (41). The dimension of an inductor interconnect (51) of the inductor part (50) in the direction orthogonal to the first main surface (100A) is greater than the dimension of the capacitor part (30) in the direction orthogonal to the first main surface (100A).

In certain aspects, acapacitive sensing circuit includes a current mirror circuit configured to receive two input current signals associated with two respective capacitance values and send two mirrored current signals, acurrent-differential current-summing circuit configured to receive the two mirrored current signals from the current mirror circuit and send a current-differential signal and a current-summing signal, a transconductor circuit including a transconductor, and the transconductor circuit is configured to receive the current-differential signal and send a feedback current, and a clamping circuit configured to receive the feedback current and minimize a difference between two voltages of two respective nodes of the current mirror circuit.

The invention discloses a construction method of a polar liquid p-n junction and a thermovolt effect of the polar liquid p-n junction. According to the method, polar liquid is adopted as a liquid semiconductor, and an electrode P and an electrode N with different free electron densities are placed in the polar liquid and do not chemically react with the liquid. Dipole layers with high concentration and low concentration are respectively formed on the P / L interface and the N / L interface, so that the capacitance characteristics of the interfaces are adjusted, and a p-n junction capacitor is formed. Residual built-in electric field intensity delta EP / L and delta EN / L are formed through the difference between an interface built-in electric field and an external electric field generated by polarization, the residual built-in electric field intensity delta EP / L and the residual built-in electric field intensity delta EN / L are synthesized into a total residual built-in electric field Ebi, and then the polar liquid p-n junction with the barrier capacitance is constructed. Under the condition of uniform temperature, trace polar molecules or electrolyte molecules in the polar liquid absorb heat and are decomposed into positive ion-negative ion pairs, and the positive ion-negative ion pairs drift towards the electrode P and the electrode N respectively under the action of the p-n junction to form ion capacitance, so that the p-n junction capacitor has spontaneous power generation and power storage functions and shows a thermovolt effect.

This invention relates to the field of energy storage materials technology, specifically to a conductive polymer based on quinacridone, its preparation method, and its application. The conductive polymer based on quinacridone is shown in formula (I): (I) In formula (I), n represents the average degree of polymerization, and n ranges from 10 to 2000. The conductive polymer based on quinacridone in this invention has good solubility and can be dissolved in a solvent to form a solution. It can then be sprayed to achieve large-area processing, which simplifies the preparation process of electrode materials. Using nickel foam as a conductive substrate, the prepared energy storage color-changing material still has a high areal capacitance at high current densities and good charge-discharge stability at different current densities. Furthermore, the amount of stored energy can be determined by observing the change in electrode color, which has great application prospects in the field of supercapacitors.

This capacitor (1A) has the following features: an insulating substrate (10) with a main surface (10a); a capacitance-forming section (20) provided on the main surface (10a); and a first external connection and a second external connection connected to the capacitance-forming section (20). The capacitance-forming section (20) comprises a conductive uneven or porous structure (21) connected to the first external connection, a dielectric film (22a) covering the surface of the structure (21), and a conductive film (23) covering a portion of the dielectric film (22a) and connected to the second external connection. The outermost surface of the capacitance-forming section (20) has an uneven shape.The dielectric film (22a) has an exposed section (222) that is not covered by the conductive film (23) and a non-exposed section (221) that is covered by the conductive film (23). An outer edge of the capacitance-forming section (20) in a direction parallel to the main surface (10a) is defined by the exposed section (222).

This invention relates to a method and system for evaluating the scanning imaging performance of a coplanar capacitance sensor, belonging to the field of coplanar capacitance sensors, and solves the problem that evaluating the scanning imaging performance of coplanar capacitance sensors in the prior art requires a large amount of time. The method for evaluating the scanning imaging performance of a coplanar capacitance sensor according to this invention includes: acquiring a sensitivity distribution map of the target sensor on a surface layer at a preset detection depth; extracting high-sensitivity concentrated areas from the sensitivity distribution map of the surface layer as a meta-image; and evaluating the scanning imaging performance of the target sensor on the surface layer based on the meta-image. The meta-image proposed in this invention can reflect the correlation between the coplanar capacitance sensor and the reconstructed image quality at the corresponding detection depth. Directly evaluating the scanning imaging performance of the coplanar capacitance sensor based on the meta-image can save time and improve evaluation efficiency.

The invention discloses an electrochromic device based on a three-electrode structure and a preparation method of the electrochromic device, and belongs to the technical field of electrochromic devices.The device comprises a polyaniline positive electrode, a tungsten oxide negative electrode, a zinc auxiliary electrode and an electrolyte, and the polyaniline positive electrode, the tungsten oxide negative electrode, the zinc auxiliary electrode and the electrolyte form a parallel-like capacitor structure; the zinc auxiliary electrode and the polyaniline positive electrode form an acceleration gate structure, and the electrolyte contains 1 mol L of lithium perchlorate and can be doped with 0.1-0.5 mol L of zinc perchlorate, so that Li < + > and Zn < 2 + > synergistically participate in ion implantation and extraction reaction. After optimization, the device can be reversibly switched to yellow, green, blue and purple from transparent under the voltage of 0.2-1.6 V, and the optical transmittance modulation amplitude reaches 88.1%; the capacitance reaches 14.67 mFcm < 2 > at the scanning rate of 10 mVs, which is more than 12 times that of a traditional dual-electrode device. The system is excellent in stability and expandability, and a brand new design thought is provided for application of intelligent windows, optical filters, optical switches, photon chips and the like.

The invention provides a soil moisture content sensor and a measuring method thereof, and belongs to the technical field of soil moisture content measurement, and the method comprises the following steps: constructing a voltage output type soil moisture content sensor with an annular inner groove structure based on a parallel coplanar capacitance principle, and measuring the voltage output type soil moisture content by measuring electrical parameters related to a charge-discharge time constant of a sensing capacitor in a charge-discharge unit, and outputting a voltage signal proportional to the electrical parameter to obtain the soil moisture content value. According to the method, the problem that the precision, the cross-soil adaptability and the response speed of an existing soil moisture content sensor are difficult to consider at the same time is solved.

The present description relates to an electromagnetic field probe (10) comprising: a ground plane (12); a capacitive roof (13); the ground plane and the capacitive roof being separated by a dielectric material (14); at least three vias (110, 111, 112) extending through the dielectric material and comprising at least one excitation via and at least one grounding via arranged so as to form, when the at least one excitation via is powered, two current loops, each current loop extending in the plane of the capacitive roof and in a direction orthogonal to said capacitive roof, so as to be sensitive to a magnetic field (H1, H2) parallel to the plane of the capacitive roof, the current loops having directions orthogonal to each other in the plane of the capacitive roof.

This application provides a capacitor assembly for an array substrate, an array substrate, a manufacturing method thereon, and a display panel. The capacitor assembly includes: a first electrode layer and a second electrode layer spaced apart; at least a portion of the capacitor assembly has a rolled structure extending along a first direction, and the first electrode layer and the second electrode layer are respectively rolled up when projected onto a plane perpendicular to the first direction. By providing a capacitor assembly with a rolled structure, compared to a planar capacitor, the projected area of ​​the capacitor assembly on the array substrate can be reduced, improving the light transmittance of the array substrate and thus improving the display effect; furthermore, the rolled shape of the capacitor assembly can increase the area of ​​the first electrode layer and the second electrode layer, that is, further increase the capacitance of the capacitor assembly and improve the display effect of the array substrate.

The invention belongs to the technical field of flexible electronic sensors, and particularly relates to an interdigital coplanar capacitive conformal flexible pressure sensor. The sensor sequentially comprises a flexible substrate, an interdigital coplanar electrode layer, a dielectric layer and an attached packaging layer from bottom to top, interdigital electrodes which are mutually staggered in the interdigital coplanar electrode layer are integrated in the same plane, the electrode materials are flexible conductive composite materials, and the ratio of the finger width to the finger distance is 1: 1 to 1: 2; the dielectric layer is selected from a pure flexible polymer or a polymer-ionic liquid composite system. According to the invention, through the electrode coplanar design, the interface combination enhancement and the micro-structure cooperative adaptation, the problems of easy interlayer stripping, complex signal extraction and insufficient conformal performance of the existing interdigital coplanar capacitor structure in the traditional parallel plate capacitor structure are thoroughly solved. Under the extreme conformal state that the bending radius is not larger than 3 mm and the tensile strain is not larger than 40%, the pressure sensitivity of the sensor is not lower than 12 kPa <-1 >, the cycling stability is excellent, the sensor can be tightly attached to a dynamic curved surface, and the sensor is suitable for the fields of wearable health monitoring, man-machine interaction, flexible robot sensing and the like.

The utility model discloses a flexible array type electrode coplanar capacitance imaging device for detecting thermal insulation pipeline defects. The device is mainly composed of a pipeline mechanical movement device, a flexible array coplanar capacitive sensor and the like, the pipeline mechanical movement device carries the flexible array coplanar capacitive sensor, stable advancing detection is guaranteed, and meanwhile 360-degree dead-corner-free measurement can be conducted by rotating around a pipeline; the flexible array coplanar capacitive sensor ensures that the equivalent lift-off heights of the coplanar capacitive sensor and the thermal insulation pipeline are the same, and can adapt to thermal insulation pipelines with different curvatures; the problem that the defect depth detection precision is reduced due to the fact that the nonuniformity of the electric field between the pole plate and the detected target caused by the curved surface target aggravates the nonlinearity of the distribution of the electric field in the depth direction and the spacing of the pole plate can be well solved, the effective field intensity is ensured, and the detection precision is improved; the optimal response can be obtained under different measurement depths through different electrode pairs, and the reliability of the sensor in practical application can be improved.

This invention relates to a multidimensional force sensor. Its structure utilizes the bending of a flexible strip to form a curved capacitor on the lower electrode. The curved surface is fixed and pre-pressed onto the circuit board containing the lower electrode. Deformation under the influence of an elastic cantilever beam generates capacitance changes in each electrode, reflecting three-dimensional force and torque. This multidimensional force sensor offers advantages such as high sensitivity, strong stability, convenient wiring, simple structure, minimal or no calibration, and easy calibration. It can supplement six-dimensional force measurement at small joints.