Double-sided capacitor structure, forming method thereof and DRAM

Abstract

The invention discloses a double-sided capacitor structure, a forming method thereof and a DRAM. The forming method of the capacitor structure comprises the following steps: forming a conductive supporting layer on a semiconductor substrate; etching the conductive supporting layer, forming a plurality of capacitor holes in the conductive supporting layer, and taking the conductive supporting layeramong the capacitor holes as one part of an upper electrode of the double-sided capacitor; and forming a double-sided capacitor in the capacitor hole. The conductive supporting layer which has conductive performances is formed, so when the conductive supporting layer is etched by adopting a plasma etching process to form the capacitor hole, the charge accumulation effect caused by using insulating materials such as silicon oxide as a sacrificial layer can be effectively reduced, and the inhibition on high aspect ratio contact etching is reduced, so that the capacitor hole formed in the conductive supporting layer is prevented from generating a conical shape.

Description

technical field [0001] The invention relates to the field of memory manufacturing, in particular to a double-sided capacitor structure, a forming method thereof, and a DRAM memory. Background technique [0002] Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is a semiconductor storage device commonly used in computers, and is composed of many repeated storage units. Each memory cell usually includes a capacitor and a transistor. The gate of the transistor is connected to the word line, the drain is connected to the bit line, and the source is connected to the capacitor. The voltage signal on the word line can control the opening or closing of the transistor, and then through the bit line Read the data information stored in the capacitor, or write the data information into the capacitor through the bit line for storage. [0003] As the manufacturing process continues to evolve, the integration level of DRAM continues to increase, the size of components cont...

AI Technical Summary

Problems solved by technology

[0005] The performance of the double-sided capacitor formed by the existing technology still needs to be improved, and the process is complicated

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