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Planar capacitor with high stripping force and high dielectric constant and preparation method thereof

A capacitor and planar technology, applied in the field of planar capacitors and its preparation, can solve the problems of inability to form planar capacitor products with use value, poor adhesion of dielectric materials to metal films, etc.

Inactive Publication Date: 2020-02-25
深圳市峰泳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the increase of the inorganic phase will inevitably lead to the deterioration of the adhesion of the dielectric material to the metal film, and it is impossible to form a planar capacitor product with use value.

Method used

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  • Planar capacitor with high stripping force and high dielectric constant and preparation method thereof
  • Planar capacitor with high stripping force and high dielectric constant and preparation method thereof
  • Planar capacitor with high stripping force and high dielectric constant and preparation method thereof

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preparation example Construction

[0028] The present invention also provides a preparation method of the planar capacitor, such as Figure 2-Figure 5 Shown, this preparation method comprises the steps:

[0029] Such as figure 2 , roughening the surfaces of the first metal film 120 and the second metal film 130;

[0030] Such as image 3As shown, a first silane coupling agent layer 125 is formed on the roughened surface of the first metal film 120, and a second silane coupling agent layer 135 is formed on the roughened surface of the second metal film 130;

[0031] Such as Figure 4 As shown, the dielectric layer 110 is formed on the surface of the first silane coupling agent layer 125, and the dielectric layer 110 contains a thermosetting polymer capable of reacting with the silane coupling agent;

[0032] Such as Figure 5 As shown, the second silane coupling agent layer 135 formed on the surface of the second metal film 130 is attached to the surface of the dielectric layer 110; and

[0033] The plana...

Embodiment 1

[0055] Two pieces of copper foil with a thickness of 35 μm are provided, and the surface roughness value Ra of the copper foil is 0.5 μm by using a surface roughening process as the first metal film and the second metal film. The surface roughening treatment process includes: soaking the copper foil with PCB copper foil brown oxidation solution for 30s, then rinsing it with pure water, and drying it at 60°C to complete the roughening treatment.

[0056] Prepare a silane coupling agent solution with a concentration of 1%wt by using amino-containing silane KH550 and 95% ethanol. After mixing evenly, place and mature at room temperature for 2 to 3 hours to obtain a silane coupling agent solution for use.

[0057] Coating the silane coupling agent solution on the roughened surface of the first metal film and the second metal film respectively, and drying at 60°C for 20 minutes to obtain a layer coated with the first silane coupling agent respectively The first metal film and the s...

Embodiment 2

[0063]Two pieces of copper foil with a thickness of 25 μm are provided, and a surface roughening treatment process is used to make the surface roughness value of the copper foil Ra=0.5 μm, as the first metal film and the second metal film. The surface roughening treatment process includes: sandblasting with 1000 mesh silicon nitride for 20s, and then removing the sand on the surface to complete the roughening treatment;

[0064] Use siloxane KH570 containing methyl acrylate group and 95% ethanol to prepare a silane coupling agent solution with a concentration of 1.5% wt. After mixing evenly, place it at room temperature for aging for 2 to 3 hours to obtain a silane coupling agent solution for later use;

[0065] The silane coupling agent solution is coated on the surface of the first metal film and the roughened surface of the second metal film respectively, and then dried at 60°C for 20 minutes to obtain the surface coated with the first silane coupling agent. The first metal...

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Abstract

The invention provides a planar capacitor with high stripping force and high dielectric constant and a preparation method thereof. In a preparation process of the planar capacitor, surface rougheningtreatment is carried out on a metal film, a silane coupling agent layer is added between the metal film and a dielectric layer, the dielectric layer comprises a thermosetting resin polymer capable ofreacting with a silane coupling agent, pressurization and heating are carried out in the curingsnf molding process, and through the improvement of the process, the binding force between the dielectriclayer and the metal film is increased.

Description

technical field [0001] The invention relates to a planar capacitor with high peeling force and high dielectric constant and a preparation method thereof, belonging to the field of new materials. Background technique [0002] High dielectric constant polymer-based composites have attracted extensive attention due to their advantages such as good mechanical properties, light weight, low cost, and easy processing. In recent years, with the miniaturization of electronic products and the advancement of embedding technology, research on high-dielectric polymer-based dielectric materials is in the ascendant. Polymer-based composite materials filled with high-dielectric ceramic particles or metal conductor particles can have both Properties such as high dielectric constant, low dielectric loss, and easy processing have become a trend in the preparation of materials with high dielectric constant and low loss. [0003] Dielectric materials with a dielectric constant ≤ 22 have been co...

Claims

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Application Information

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IPC IPC(8): H01G4/14
CPCH01G4/14
Inventor 李峰刘侠侠陶玉红李露余谋发卢星华袁启斌
Owner 深圳市峰泳科技有限公司
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