Groove-type IGBT chip layout structure

Abstract

The invention provides a groove-type IGBT chip layout structure. The groove-type IGBT chip layout structure comprises a plurality of groove-type IGBT chips which are arranged along a first direction and a second direction which are perpendicular to each other; each groove-type IGBT chip comprises a cellular structure, a plurality of parallel gate grooves are formed in each cellular structure, and the gate grooves are formed in the first direction or the second direction; and the directions of the gate grooves of the two adjacent groove type IGBT chips arranged along the first direction and the second direction are perpendicular to each other. The IGBT chip gate grooves on a wafer are distributed in a criss-cross mode in the first direction and the second direction, the wafer is warped downwards through gate polycrystalline silicon filling the longitudinal gate grooves, the wafer is warped upwards through gate polycrystalline silicon filling the transverse gate grooves, the criss-cross gate grooves enable pressure stress and tensile stress to be mutually counteracted, so that the problem of wafer warping in the manufacturing process of the groove-type IGBT chip is effectively improved on the basis of not changing the process or increasing the cost.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, in particular to a trench IGBT chip layout structure. Background technique [0002] Power semiconductor devices, also known as power electronic devices, are the core devices for power electronic devices to realize electric energy conversion and circuit control. The main uses include frequency conversion, rectification, voltage transformation, power amplification and power control, etc., and it also has energy-saving effects. Power semiconductor devices are widely used in power electronics fields such as mobile communications, consumer electronics, new energy transportation, rail transit, industrial control, power generation and distribution, covering low, medium and high power levels. There are many types of power semiconductors, such as IGBT, VDMOS, CoolMOS, among which the most representative semiconductor power device is IGBT. [0003] IGBT (Insulated Gate Bipolar Transis...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a trench IGBT chip layout structure, which is used to solve the problem that the trench IGBT chip of the strip cell in the prior art is prone to wafer cracking during the manufacturing process. Problems such as warping

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