High-Q-value metasurface refractive index sensor based on connection of double semicircular ring holes

A refractive index sensor and metasurface technology, applied in the field of micro-nano optical sensing, can solve the problems of strong radiation loss and low Q value of metal structures

Inactive Publication Date: 2021-09-10
BEIJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

At present, people's research on the refractive index sensor mainly focuses on the metal-based plasmonic structure. However, due to the strong radiation loss caused by the free electron oscillation in the metal structure, the Q value of the metal structure is usually low, which limits the metal-based plasmonic structure. Applications of Plasmonic Structured Devices in Nanophotonics

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  • High-Q-value metasurface refractive index sensor based on connection of double semicircular ring holes
  • High-Q-value metasurface refractive index sensor based on connection of double semicircular ring holes
  • High-Q-value metasurface refractive index sensor based on connection of double semicircular ring holes

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Embodiment Construction

[0020] The specific embodiment of the present invention is explained in detail below in conjunction with accompanying drawing: This implementation example is based on the premise of a kind of high-Q metasurface refractive index sensor based on connecting double semicircular holes proposed by the present invention. It should be known that the scope of protection of the present invention Including but not limited to this example.

[0021] figure 1 An example of a high-Q metasurface refractive index sensor based on connecting double semicircular holes is listed, including metasurface structure and transparent silicon dioxide structure substrate. It is composed of several microstructure units and two connected semicircular holes are symmetrically etched in the center of each dielectric metasurface microunit. The inner and outer circle radii of the two connected semicircular holes are both R1=170nm and R2=220nm. The material is single crystal silicon, and the periods in the XY dir...

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Abstract

The invention discloses a high-Q-value dielectric metasurface refractive index sensor based on connection of double semicircular ring holes, and the optical refractive index sensor is mainly composed of a dielectric substrate and a metasurface microstructure unit array. the dielectric metasurface structure unit array is composed of a plurality of micro-structure units, two connecting semicircular holes are etched in each dielectric metasurface micro-structure unit in a central symmetry mode, and the radiuses of the inner circle and the outer circle of the two connecting semicircular holes are both R1 and R2. When light waves are vertically incident, a sharp Fano resonance is formed in a transmission spectrogram of the device and can be used for a refractive index sensor. The sensor is made of an all-dielectric material, has no ohmic loss, shows a relatively high Q value, and can be used for detecting gases and liquids with different refractive indexes.

Description

technical field [0001] The invention relates to the field of micro-nano optical sensing, in particular to a high-Q metasurface refractive index sensor based on connecting double semicircular holes. Background technique [0002] Optical refractive index sensors are widely used in the measurement of refractive index in physical chemistry, biomedicine, food processing, etc., and have attracted extensive attention from researchers. Usually, the sensitivity of a refractive index sensor is defined as the change of resonance wavelength per unit refractive index, namely: S=Δλ / Δn. In addition, the Q value of the resonant cavity is another important parameter for evaluating optical refractive index sensors. High-Q resonators are easier to detect and easier to integrate. At present, people's research on the refractive index sensor mainly focuses on the metal-based plasmonic structure. However, due to the strong radiation loss caused by the free electron oscillation in the metal struc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/41
CPCG01N21/41
Inventor 余世林高子昂赵同刚余建国
Owner BEIJING UNIV OF POSTS & TELECOMM
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