Silicon carbide power module packaging structure capable of directly integrating phase change heat dissipation

Abstract

The invention discloses a silicon carbide power module packaging structure capable of directly integrating phase change heat dissipation. The silicon carbide power module packaging structure comprises an upper bridge arm, a lower bridge arm, a bottom substrate, a shell, a power substrate, a driving PCB system and a phase change heat dissipation device, and is characterized in that the shell is buckled and fixed on the bottom substrate, the power substrate is fixed on the bottom substrate, the phase change heat dissipation device is fixed on the power substrate, and the upper bridge arm, the lower bridge arm and the driving PCB system are all fixed on the phase change heat dissipation device. According to the invention, the structure can greatly reduce the junction temperature and junction temperature fluctuation of a chip.

Description

technical field [0001] The invention belongs to the technical field of power device packaging, and relates to a silicon carbide power module packaging structure directly integrated with phase change heat dissipation. Background technique [0002] The power module is a module formed by packaging and integrating a series of power electronic power chips according to certain functions. Compared with the power electronic converter composed of discrete power electronic power devices, the power module has high reliability and high power density. , The characteristics of high integration, have high advantages in electrical performance, thermal performance, safety protection, cost and so on. Among the power modules, the half-bridge power module has flexible applications and can be constructed into various topologies such as MMC and three-phase inverters, and is the most widely used. [0003] In recent years, with the continuous development of power electronic devices, the requiremen...

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Problems solved by technology

Although these heat dissipation methods can cope with the high heat flux density of silicon carbide chips, these more advanced methods increase the complexity of the heat dissipation system, reduce the reliability of the system, and also increase the energy consumption and cost of the heat dissipation system

[0006] 3. For the problem of high junction temperature of silicon carbide devices, another solution is to improve the packaging structure, mainly using 3D packaging for double-sided heat dissipation, but the manufacturing process of double-sided heat dissipation modules is complicated. Currently, for double-sided Insufficient research on module reliability

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