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A laser-assisted in-situ mass transfer method and system

A laser-assisted transfer method technology, applied in laser welding equipment, manufacturing tools, welding equipment, etc., can solve problems such as yield and efficiency, and achieve the goal of increasing transfer efficiency, improving processing yield, and achieving high efficiency Effect

Active Publication Date: 2021-12-31
TSINGHUA UNIV
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Problems solved by technology

[0006] In order to solve the problems of yield and efficiency in the existing mass transfer link, the present invention provides a laser-assisted in-situ mass transfer method and system

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  • A laser-assisted in-situ mass transfer method and system
  • A laser-assisted in-situ mass transfer method and system
  • A laser-assisted in-situ mass transfer method and system

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Embodiment Construction

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] Such as Figure 1-Figure 6 As shown, a laser-assisted in-situ mass transfer method includes the following steps:

[0031] S1. Prepare the substrate 11 on which the Micro-LED chip 110...

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Abstract

The invention discloses a laser-assisted in-situ mass transfer method and system, which mainly includes the following content: using infrared laser with a longer wavelength, and under the premise of ensuring the laser energy density, the characteristic of a larger laser spot radius is beneficial to the growth of Micro-LED The GaN / sapphire substrate of the chip is scanned by a laser vibrating mirror, and the Micro-LED chip is peeled off from the substrate and transferred to a temporary transfer structure; the "cold processing" effect of ultrashort pulse laser and the energy accumulation principle of multi-pulse action are used For the temporary transfer structure, the laser galvanometer is used to scan quickly point by point to realize the high-speed fixed-point mass transfer of the Micro-LED chip to the target substrate; the semi-reflective mirror is used to introduce the two lasers into the same laser processing optical path, and the A laser beam expander is set at the laser light exit. The present invention uses dual laser beam scanning and pulsed laser point-by-point scanning to transfer a large amount of Micro-LED chips, so that the transfer rate is high and the yield rate is guaranteed.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic technology, in particular to a laser-assisted in-situ mass transfer method and system. Background technique [0002] Micro-LED is a micro-light-emitting diode, which refers to a high-density integrated LED array, in which the distance between LED pixels in the array is on the order of 10 μm, and each LED pixel can emit light by itself. Compared with LCD and OLED technologies, Micro-LED has become a recognized next-generation display technology in the industry due to its high resolution, low power consumption, high brightness, high color saturation, fast response, thin thickness, and long life. [0003] The Micro-LED manufacturing process mainly includes four key technologies, namely epitaxy and chip technology, mass transfer technology, bonding technology, and colorization scheme. Among them, the mass transfer technology mainly refers to the technology of quickly and accurately transfe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67B23K26/064B23K26/0622B23K26/082B23K26/70
CPCB23K26/0643B23K26/0624B23K26/082B23K26/702
Inventor 张震杨伟刘义杰
Owner TSINGHUA UNIV