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Micro-groove IGBT and manufacturing method thereof

A manufacturing method and micro-groove technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the inability to ensure the controllability of IGBT, achieve the effect of optimizing static characteristics and enhancing controllability

Pending Publication Date: 2021-09-17
MACMIC SCIENCE & TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the upgrading of technology, the micro-groove MPT (Micro Pattern Trench) structure has been gradually applied to the latest products. The increase in shrinking trench density will inevitably lead to an increase in parasitic capacitance, which cannot ensure the controllability of the IGBT during turn-on and turn-off.

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  • Micro-groove IGBT and manufacturing method thereof
  • Micro-groove IGBT and manufacturing method thereof
  • Micro-groove IGBT and manufacturing method thereof

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Embodiment Construction

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0022] figure 1 is a schematic structural diagram of a micro-groove IGBT according to an embodiment of the present invention, such as figure 1 As shown, the structure includes a semiconductor substrate 10 and IGBT cells. The IGBT cells adopt an MPT structure. The IGBT cells include: a plurality of true gate units 20, and there are different numbers of gate units between adjacent true gate units 20. Dummy trench unit (dummy trench unit) 30 and / or dummy gate un...

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Abstract

The invention provides a micro-groove IGBT and a manufacturing method thereof. The micro-groove IGBT comprises a semiconductor substrate and an IGBT cell; the IGBT cell comprises a plurality of true grid units; different numbers of false groove units and / or false grid units are arranged between adjacent true grid units, and the false groove units and / or the false grid units are symmetrically arranged; PW conducting layers are formed in the middles of the connected grooves through injection of push junctions to cover the bottoms of the grooves; and JFET layers are formed on the lower portions of the PW conducting layers on the two sides of the true grid units through injection of push junctions. According to the invention, the PW conducting layers cover the bottoms of the grooves, and JFETs are introduced to the two sides of the true grid units, so that the PW locally maintains the original depth, the channel length is not changed, the static characteristics of the IGBT are optimized, the Miller capacitance is reduced through the virtual grid, the proportion of the input capacitance to the Miller capacitance is increased, and the controllability of the on-off process of the IGBT is further enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a micro-groove IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and a method for manufacturing the micro-groove IGBT. Background technique [0002] With the upgrading of technology, the micro-groove MPT (Micro Pattern Trench) structure has been gradually applied to the latest products. The increase in shrinking trench density will inevitably lead to an increase in parasitic capacitance, so that the controllability during the turn-on and turn-off process of the IGBT cannot be ensured. Contents of the invention [0003] In order to solve the above technical problems, the present invention provides a micro-groove IGBT. On the basis of the micro-groove IGBT, the present invention covers the PW (P-type well) conductive layer to the bottom of the groove by adjusting the structure of the gate. JFET (Junction Field-Effect Transistor, Junction Field Ef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/7397H01L29/66348
Inventor 俞义长赵善麒
Owner MACMIC SCIENCE & TECHNOLOGY CO LTD
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