Micro LED and preparation method thereof
A transparent conductive layer, metal technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., to achieve good insulation, enhanced adhesion effect, better insulation effect
Active Publication Date: 2021-09-17
JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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Problems solved by technology
[0005] The purpose of the present invention is to improve the passivation effect to improve the problem of leakage dead lamp
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[0040] In order to make the purpose, technical solution and advantages of the present application clearer, the following will clearly and completely describe the technical solution of the present application in combination with specific implementation methods of the present application and corresponding drawings. Apparently, the described implementations are only some of the implementations of this application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0041] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the f...
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Abstract
The invention discloses a micro LED and a preparation method thereof. The micro LED comprises a substrate, an epitaxial layer, a current blocking layer, a transparent conducting layer, a first metal pad, a second metal pad, an insulating layer, a DBR reflecting layer, a first metal electrode and a second metal electrode. The insulating layer is arranged on the transparent conductive layer and wraps the transparent conductive layer without the area of the first metal pad. According to the micro LED, the insulating layer is additionally arranged between the transparent conducting layer and the DBR reflecting layer, the insulating property is better, electric leakage between the first metal pad and the second metal pad can be improved, furthermore, the insulating layer is an AlN layer formed by coating through the PVD technology, the AlN layer prepared through the conditions has the good film density, the better insulating property can be achieved, electric leakage between the first metal pad and the second metal pad is avoided, and meanwhile, the adhesion effect between the DBR reflecting layer and the transparent conductive layer is enhanced, so that the reliability of the micro LED is improved.
Description
technical field [0001] The invention relates to a micro-LED and a preparation method thereof, in particular to a micro-LED of an anti-leakage electro-dead lamp and a preparation method thereof. Background technique [0002] At present, flip-chip micro LED chips are mainly grown based on sapphire substrates combined with GaN materials. Micro LEDs (miniLEDs / microLEDs) are grown based on sapphire patterned substrates, and then the chip process is processed, and the passivation layer and DBR reflective layer are grown. Evaporation Electrodes and grinding sheets are shipped in batches according to customer needs. [0003] The specific structure is as figure 1 As shown, the epitaxial layer 2 (n-GaN layer 21, multi-quantum well layer 22 and p-GaN layer 23) is deposited on the substrate 1, and then the current blocking layer 3 and the transparent conductive layer 4 are deposited in sequence, and finally the first metal pad5 and the second metal pad7, then deposit the DBR reflectiv...
Claims
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IPC IPC(8): H01L33/44H01L33/10H01L33/42H01L33/06H01L33/14H01L33/00
CPCH01L33/44H01L33/10H01L33/42H01L33/06H01L33/145H01L33/007H01L2933/0016H01L2933/0025
Inventor 曹玉飞江汉张弛陈传国林潇雄褚志强
Owner JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD