Preparation method of large-area ordered quantum dot film based on Langmuir technology

A quantum dot and large-area technology, applied in the nanometer field, can solve the problems such as the difficulty in preparing large-area highly ordered films, and achieve the effects of precise and controllable film thickness, simple process and low cost

Pending Publication Date: 2021-09-21
FUZHOU UNIVERSITY
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, in order to overcome the defects and deficiencies in the prior art, the object of the present invention is to provide a method for preparing a large-area ordered quantum dot fi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of large-area ordered quantum dot film based on Langmuir technology
  • Preparation method of large-area ordered quantum dot film based on Langmuir technology

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0023] In order to make the features and advantages of this patent more obvious and easy to understand, the following special examples are described in detail as follows:

[0024] In this embodiment, CdSe quantum dots are used as the quantum dot material, and deionized water is used as the subphase.

[0025] This embodiment provides a method for preparing a large-area ordered CdSe quantum dot film based on Langmuir technology, figure 1 It is a schematic flow diagram of a preferred embodiment for preparing a large-area ordered CdSe quantum dot film based on Langmuir technology, as shown in the figure, and the specific steps are:

[0026] A, disperse the quantum dots in a non-polar solution to form a quantum dot solution;

[0027] B. Add the quantum dot solution dropwise on deionized water, disperse the quantum dots on the water surface through the joint tension of water and solvent, and wait for the solvent to evaporate for 30 minutes;

[0028] C. Control the speed of the sli...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a preparation method of a large-area ordered quantum dot film based on a Langmuir technology. The method comprises the following steps: spreading a quantum dot solution dispersion liquid in a Langmuir groove to form a single layer, forming a large-area highly ordered film by controlling the extrusion of a sliding barrier on quantum dots, and finally transferring the film to a substrate with any material and any size. The method has the advantages of low preparation cost, neat and compact film arrangement, accurate film thickness control, easy large-area film formation, capability of depositing on any substrate and the like.

Description

technical field [0001] The invention belongs to the field of nanotechnology, in particular to a method for preparing a large-area ordered quantum dot film based on Langmuir technology. Background technique [0002] Langmuir technology is a film-making technology that can precisely control the film pressure, thickness, and material arrangement. It disperses the material on the gas / liquid interface and uses a sliding barrier to apply a horizontal force to the material to make the material arrangement more accurate. Dense and orderly. [0003] Nowadays, film-forming technologies such as spray coating and spin-coating are difficult to prepare large-area and highly ordered nanomaterial films, and will also generate material waste, which is extremely unfavorable for commercial film production. Contents of the invention [0004] In view of this, in order to overcome the defects and deficiencies in the prior art, the object of the present invention is to provide a method for prep...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K11/88
CPCC09K11/883
Inventor 李福山赵等临胡海龙郭太良井继鹏
Owner FUZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products