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A mid-far infrared crystal ligage 2 se 6 Method for synthesizing polycrystalline raw material and method for growing single crystal

A synthesis method and single crystal technology, applied in polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problem of lack of frequency conversion materials in the far infrared band

Active Publication Date: 2022-07-26
HEILONGJIANG INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the technical problem of the lack of suitable frequency conversion materials in the 8-10 μm far-infrared band in the prior art, and provides a mid-to-far infrared crystal LiGaGe 2 Se 6 Method for synthesizing polycrystalline raw material and method for growing single crystal thereof

Method used

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  • A mid-far infrared crystal ligage <sub>2</sub> se <sub>6</sub> Method for synthesizing polycrystalline raw material and method for growing single crystal
  • A mid-far infrared crystal ligage <sub>2</sub> se <sub>6</sub> Method for synthesizing polycrystalline raw material and method for growing single crystal
  • A mid-far infrared crystal ligage <sub>2</sub> se <sub>6</sub> Method for synthesizing polycrystalline raw material and method for growing single crystal

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Embodiment 1

[0028] Example 1: The mid-far infrared crystal LiGaGe of this example 2 Se 6 The synthetic method of polycrystalline raw material is carried out according to the following steps:

[0029] 1. Weigh 1.6 grams of elemental lithium, 13.9 grams of elemental gallium, 30.5 grams of elemental germanium and 99.5 grams of elemental selenium, respectively, place elemental selenium at the bottom of the quartz tube, and place gallium, germanium and lithium in a round-bottomed PBN crucible. Put it into a quartz tube and press down the elemental selenium;

[0030] 2. Evacuate the quartz tube in step 1 to 10 -5 Pa, seal the quartz tube with oxyhydrogen flame, and then put the quartz tube into the inclined rotating resistance furnace;

[0031] 3. The temperature is raised to 220°C at 100°C / h, and kept for 24h; the target product in this step is alloy LiGa, and the chemical reaction is: Li+Ga=LiGa;

[0032] 4. The temperature is raised to 750°C at 50°C / h, and the temperature is kept for 20h...

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Abstract

A mid-far infrared crystal LiGaGe 2 Se 6 The invention relates to a method for synthesizing polycrystalline raw materials and a method for growing a single crystal, which relates to the preparation technology of mid- and far-infrared laser materials. It is to solve the technical problem of the lack of suitable frequency conversion materials in the far-infrared band of 8 to 10 μm in the prior art. Put the crucible into a quartz tube, and put the quartz tube into an inclined rotating resistance furnace after being evacuated and sealed. The resistance furnace is heated, kept warm, cooled, cooled and melted to obtain LiGaGe 2 Se 6 Polycrystalline raw material. Then use a water-cooled vertical three-temperature zone single crystal growth furnace, using LiGaGe 2 Se 6 Growth of LiGaGe from Polycrystalline Feedstock 2 Se 6 Single crystal, adding an appropriate amount of inhibitor during growth to inhibit LiGaGe 2 Se 6 The decomposition of the LiGaGe of the present invention 2 Se 6 Crystals can be used in the field of mid- and far-infrared lasers.

Description

technical field [0001] The invention relates to a polycrystalline raw material of mid-far-infrared crystal and a growth method of a single crystal thereof, and belongs to the technical field of mid-far-infrared laser material preparation. Background technique [0002] Mid- and far-infrared lasers, especially in the 3-5 μm and 8-10 μm bands, have very prominent and urgent needs in the fields of national defense and civilian use. In the prior art, the mid-infrared band ZnGeP of 3 to 5 μm 2 Crystals can basically meet the country's strategic needs for military and civilian fields, but there is still a lack of suitable frequency conversion materials in the far-infrared band of 8 to 10 μm. SUMMARY OF THE INVENTION [0003] The invention aims to solve the technical problem of lack of suitable frequency conversion materials in the far-infrared band of 8-10 μm in the prior art, and provides a mid-far-infrared crystal LiGaGe 2 Se 6 A method for synthesizing a polycrystalline raw...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B11/02
CPCC30B29/46C30B11/02C30B11/002
Inventor 马天慧张晓萌李兆清刘英张红晨林鹏
Owner HEILONGJIANG INST OF TECH