Chip weakening structure and manufacturing method thereof, mass transfer method, display panel

A manufacturing method and chip technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low transfer efficiency of a large amount of Micro-LED chips, and achieve the effect of improving transfer accuracy

Active Publication Date: 2021-12-28
SHENZHEN SITAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially the problem of low mass transfer efficiency of vertical Micro-LED chips

Method used

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  • Chip weakening structure and manufacturing method thereof, mass transfer method, display panel
  • Chip weakening structure and manufacturing method thereof, mass transfer method, display panel
  • Chip weakening structure and manufacturing method thereof, mass transfer method, display panel

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0080] As mentioned in the background technology section, mass transfer is the core technical problem faced in the process of Micro-LED industrialization at present. Micro-LED chips must first be bonded to substrates made of silicon or sapphire during the manufacturing process, and then peeled off by laser. The silicon or sapphire substrate is removed, and then the Micro-LED chip is transferred onto the driving circuit substrate. In the process of mass transfer, after the silicon or sapphire substrate is removed by laser lift-off, the Micro-LED chip will fall off from the substrate, and multiple independent single LED chips will be formed, which are randomly arranged and their positions are not fixed, resulting in During the mass transfer process, it is difficult to position a single Micro-LED chip when clamping or adsorbing, and when transferring to the drive circuit substrate, the position of the Micro-LED chip is difficult to control, resulting in a cumbersome and time-consu...

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Abstract

The application discloses a chip weakening structure and its manufacturing method, a mass transfer method, and a display panel. The LED chip weakening structure includes a plurality of Micro-LED chips and connecting bridges between adjacent Micro-LED chips; on the one hand, connecting The bridge acts as a temporary connection to prevent the vertical micro-LED chips from falling off the substrate and randomly scattered, resulting in poor mass transfer accuracy and low efficiency; on the other hand, the connecting bridge fixes each vertical micro-LED chip The position of the ‑LED chip facilitates the positioning of the vertical structure Micro‑LED chip by the clamping or adsorption device during the mass transfer process, which can also improve the transfer accuracy, thereby quickly realizing the mass transfer.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a weakened structure of a Micro-LED chip and a manufacturing method thereof, a mass transfer method of a Micro-LED chip, and a micro-LED chip formed based on a weakened structure of a Micro-LED chip and a mass transfer method. Micro-LED display panel. Background technique [0002] Micro Light Emitting Diode (Micro Light Emitting Diode, Micro-LED) has the characteristics of self-luminous display. It is an all-solid-state light-emitting diode with long life, high brightness, low power consumption, small size, and ultra-high resolution. It can be applied in extreme environments such as high temperature or radiation. Compared with OLED technology, which is also a self-luminous display, Micro-LED not only has higher efficiency, longer life, relatively stable materials, is not easily affected by the environment, and can also avoid image sticking. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00
CPCH01L27/156H01L33/0093H01L33/0095
Inventor 刘召军杨杭张珂
Owner SHENZHEN SITAN TECH CO LTD
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