Epitaxial growth apparatus

Abstract

The invention provides an epitaxial growth device. The epitaxial growth device is characterized in that the epitaxial growth device comprises a reaction chamber and a vacuum lock, the reaction chamber is provided with a plurality of heaters arranged into a circle, the reaction chamber is provided with a gas inlet passage and a gas outlet passage, the reaction chamber is further provided with a separation device capable of spraying gas to shield each heater, and the reaction chamber is also provided with a wafer loading and unloading device for loading and unloading a wafer on the heater; and the vacuum lock is provided with a wafer box used for conveying wafers. According to the invention, the productivity flux of the epitaxial process is improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology and equipment, especially an epitaxial growth device. Background technique [0002] Conceptually, the reaction chambers for silicon and silicon carbide are identical, the difference being the growth temperature and the added gas as a source of carbon. [0003] From the history of silicon epitaxy process, there are three main types of equipment: the early reaction device using radio frequency heating, the reaction device using infrared lamp heating, and the leaf-type high-speed rotating reaction device using resistance heating that appeared in recent years. Regardless of the reaction device, its basic structure includes: a quartz chamber with gas inlet and outlet, a wafer tray, and a heating device. [0004] A specific existing silicon epitaxial reaction device, as disclosed in Japanese Patent Publication No. Sho 63-222427, adopts the idea of ​​single wafer processing, is provided with a gr...

AI Technical Summary

Problems solved by technology

[0005] Similarly, there are not many types of silicon carbide epitaxial reaction devices on the market at present, and the performance parameters are not ideal.

The problem is mainly reflected in the low throughput. The processing efficiency of silicon carbide epitaxial reaction devices currently on the market is generally 1500-2500 wafers per month to grow 10 microns in thickness.

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