GaN device energy wave detector, detection method and device thereof

Abstract

The invention discloses a GaN device energy wave detector, a detection method and a device thereof. The detector comprises a GaN device, an energy wave driving circuit, a control circuit, an energy wave sampling circuit and an analysis circuit, the control circuit is connected with the energy wave driving circuit, the GaN device is respectively connected with the energy wave driving circuit and the energy wave sampling circuit, and the energy wave sampling circuit is connected with the analysis circuit. According to the invention, the square wave and the square wave driving time can be adjusted by using the duty ratio / frequency to control the start of the GaN device, and the energy wave is generated through the magnetic inductor at the start moment and is input to the GaN device, so that the instantaneous voltage and instantaneous current of the GaN device can be detected in real time, and the intensity of the energy wave is analyzed; therefore, the real-time state parameters of the GaN device can be detected, and the detection reliability can be improved.

Description

technical field [0001] The invention relates to the technical field of detection of GaN device energy waves, in particular to a detector, detection method and device for GaN device energy waves. Background technique [0002] GaN devices are currently called HEMTs (High Electron Mobility Transistors). This high electron mobility transistor is used in many electronic devices, such as fully controlled power switches, high frequency amplifiers or oscillators. [0003] When GaN devices are used in power switches, corresponding current and voltage detection needs to be carried out to determine whether the GaN devices can meet the working requirements. At present, the reliability detection of GaN devices commonly used is usually to provide a fixed voltage at the source and drain of GaN, and provide different voltages at the gate. By detecting the maximum current of GaN, it is determined whether the maximum current value of GaN is within the specification value. Inside. [0004] H...

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Problems solved by technology

[0004] However, the currently commonly used detection methods have the following technical problems: since the maximum withstand current is detected after the GaN device is connected to the voltage, it can only detect the maximum withstand current value of GaN during static operation, and it is difficult to evaluate the moment when GaN receives voltage or The maximum withstand current value during dynamic operation leads to defective detection and it is difficult to fully evaluate the reliability of GaN devices

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