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Waveguide device and preparation method thereof

A waveguide device and waveguide structure technology, applied in the directions of waveguide devices, waveguides, electrical components, etc., can solve the problems of easy cracking, affecting the performance of waveguide devices, and large stress of silicon nitride films.

Active Publication Date: 2021-10-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The object of the present invention is to provide a waveguide device and a preparation method thereof, which are used to solve the problem that the silicon nitride film has a relatively large stress when the silicon nitride film is grown in a large area when the thickness of the silicon nitride film is relatively thick. It is easy to produce cracks, which affects the technical problems of the performance of waveguide devices

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  • Waveguide device and preparation method thereof
  • Waveguide device and preparation method thereof

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Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

[0020] Various schematic views of embodiments of the invention are shown in the drawings, which are not drawn to scale. Therein, certain details have been exaggerated and certain details may have been omitted for the sake of clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, sizes, and relative positions can be additionally designed as needed.

[0021] Hereinafter, the terms "first", "second", etc. are used ...

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Abstract

The invention discloses a waveguide device and a preparation method thereof, relates to the technical field of semiconductor manufacturing, and aims to solve the technical problem that under the condition that a silicon nitride film is thick, when the silicon nitride film is grown in a large area, the silicon nitride film has large stress and is easy to crack so as to affect the performance of the waveguide device. The method comprises: providing a substrate; forming a second dielectric layer with at least one area groove on a first dielectric layer, wherein when the thickness of the second dielectric layer is greater than a preset thickness, the second dielectric layer comprises a plurality of second sub-dielectric layers formed multiple times, the second dielectric layer is a silicon nitride dielectric layer, and forming of each second sub-dielectric layer comprises the steps of depositing a second dielectric material layer on the first dielectric layer, sequentially performing first patterning processing and heat treatment on the second dielectric material layer to obtain the second sub-dielectric layer; and forming a waveguide structure in the waveguide device area of the second dielectric layer to obtain a waveguide device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a waveguide device and a preparation method thereof. Background technique [0002] At present, in the selection of materials for waveguide preparation, silicon nitride is considered to be one of the ideal waveguide materials due to its advantages of low loss and high nonlinearity. When forming a silicon nitride film, the silicon nitride film deposited by LPCVD has good quality and low waveguide loss. [0003] However, in practice, when the thickness of the silicon nitride film is thick, the silicon nitride film has a different thermal expansion coefficient from the substrate. When the silicon nitride film is grown in a large area, the silicon nitride film has a large stress, which is easy to Cracks are generated, thereby affecting the performance of waveguide devices. Contents of the invention [0004] The object of the present invention is to provide a wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P11/00H01P3/00
CPCH01P11/001H01P3/00
Inventor 李彬李志华谢玲李东浩唐波张鹏杨妍刘若男
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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