Transient voltage suppression protection device with latticed cathode and anode groove structures

Abstract

The invention provides a transient voltage suppression protection device with a latticed cathode and anode groove structure. The device comprises a P-type substrate. An N-type epitaxy is grown on the P-type substrate; an N-type well region is manufactured on the left side of the upper part of the N-type epitaxy, and a P-type well region tangent to the N-type well region is manufactured on the right side of the upper part of the N-type epitaxy; a first N + region is manufactured on the inner left side below the surface of the N-type well region, and a first P + region tangent to the right side of the first N + region is manufactured on the right side; a second N + region is manufactured on the inner left side below the surface of the P-type well region, and a second P + region tangent to the right side of the second N + region is manufactured on the right side; a third N + region is manufactured at the junction of the N-type well region and the P-type well region and is used for forming a trigger region; a latticed first groove structure is arranged in the first P + region to divide the first P + region into a plurality of grids; and a latticed second groove structure is arranged in the second N + region to divide the second N + region into a plurality of grids. On one hand, the maintaining voltage Vh of the device can be improved to avoid latch-up, and on the other hand, the current distribution of the device is more uniform, and the current capability of the device is improved.

Description

technical field [0001] The invention relates to an SCR (silicon controlled silicon) electrostatic protection device, especially a transient voltage suppression protection device with a grid-like cathode and anode groove structure, which is mainly used in the field of electrostatic discharge (Electro Static Discharge, ESD for short) protection . Background technique [0002] Electrostatic discharge ESD (Electro-static discharge, electrostatic discharge) is ubiquitous in the process of chip manufacturing, packaging, testing and use. When it is released, the instantaneous power is as high as tens or hundreds of watts, which is extremely destructive to the chips in the circuit system. According to statistics, more than 35% of chip failures are caused by ESD damage. Therefore, in the design of chips or systems, the design of electrostatic protection modules is directly related to the functional stability of the circuit system and system reliability, which is extremely important...

AI Technical Summary

Problems solved by technology

[0003] For electrostatic protection, the SCR (silicon controlled rectifier) ​​structure is a device with high current density; but because the maintenance voltage Vh of the SCR structure is very low, it is easy to cause latch-up, so in practical applications, the protection of medium and high voltage power supplies is generally SCR will not be selected as an electrostatic protection device ( figure 1 It is the structure of traditional medium and high voltage lateral SCR devices); in order to enable SCR devices to be used in medium and high voltage power supply protection, it is key to increase their holding voltage Vh; and raising the holding voltage Vh will generally cause a significant drop in device current capability

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