IGBT module packaging structure of inverter

Abstract

The invention discloses an IGBT module packaging structure of an inverter. The positive input end and the negative input end of each half-bridge IGBT module are respectively arranged on the lower surface of a chip. A buffer capacitor can be respectively welded on the surfaces of the positive input end area and the negative input end area on the surface of a first insulation ceramic substrate, thereby maximally eliminating pin inductance of the IGBT module through short-circuit. An E pole of an upper half-bridge IGBT chip and a C pole of the lower half-bridge IGBT chip of each half-bridge IGBT module are respectively arranged on the upper surface of the chip, and can be located far from a water cooling board, thereby reducing an equivalent parasitic capacitance, reducing earth common-mode interference current, and improving EMC performance of the inverter. A binding line of each phase half-bridge IGBT module is saved, thereby improving current capability and prolonging service life time, reducing chip area and lowering inverter cost. Electric pins of each phase half-bridge IGBT module are directly welded on the insulation ceramic substrate and a chip. The distances among the positive input end, the negative input end and phase output pin of each phase half-bridge IGBT module are small, thereby realizing short outlet wire of the inverter, simplifying wiring and ensuring no easy heating of an inner chamber by copper bars.

Description

technical field [0001] The invention relates to a motor inverter, in particular to an inverter IGBT module packaging structure. Background technique [0002] Electric vehicles have gradually entered the automotive market due to fuel saving and environmental protection. The motor controller (inverter) is the core component of electric vehicles, which together with the motor constitute the "engine" of new energy vehicles. has a huge impact on performance. [0003] The core component in the inverter, the IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module accounts for more than 40% of the cost and more than 90% of the heat generation. The quality of its packaging and mechanical heat dissipation layout have a great impact on performance of the entire inverter. [0004] Such as figure 1 As shown, each half-bridge IGBT module contains two IGBT chips, the upper and lower half-bridges, and each IGBT chip has three electrodes C, E, and G, where C and...

AI Technical Summary

Problems solved by technology

The current capability of the small bonding wire is very weak, and often when the semiconductor IGBT chip is not overheated (Tj<150 degrees), the current has been limited by the bonding wire

[0008] like Figure 4 As shown, the conventional IGBT module cooling treatment method is to flatten the flat half-bridge IGBT module with large area and small thickness on the water cooling plate. far apart

In order to facilitate customer wiring, it is usually required that the three-phase output lines of the inverter IGBT module are adjacent to each other. The phase outgoing lines of the IGBT module need to be routed and bent for a long time. rise, making the working environment of electronic components harsh

The positive and negative busbars of the three-phase half-bridge IGBT module are far apart, and three pairs of busbar capacitors are required to connect with them to ensure a small parasitic inductance. There are many connection procedures, complex production, and high failure rate.

The three-phase half-bridge IGBT module needs a large area of ​​water-cooled board to cover, and the conventional water-cooled board is thick and heavy, which limits the power density of the inverter

The water channels of the three-phase half-bridge IGBT modules are connected in series, and the first two-phase half-bridge IGBT modules are heated. When the water flows through the third-phase half-bridge IGBT modules, the water temperature has risen sharply, which reduces the current capacity.

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