Bidirectional power device and manufacturing method thereof

A bidirectional power device and control gate technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased power consumption, increased on-resistance, etc., and achieves reduced channel length and reduced channel The effect of improving the resistance of the channel and improving the withstand voltage characteristics

Pending Publication Date: 2019-08-13
HANGZHOU SILAN MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the decrease of the impurity concentration of the lightly doped

Method used

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  • Bidirectional power device and manufacturing method thereof
  • Bidirectional power device and manufacturing method thereof
  • Bidirectional power device and manufacturing method thereof

Examples

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no. 1 example

[0056] Figure 2-Figure 4 Respectively show a cross-sectional view and a top view of the bidirectional power device of the first embodiment of the present invention; wherein, figure 2 for Figure 4 Sectional view taken along line AA' in the top view shown, image 3 for Figure 4 Sectional view taken along line BB' in top view shown. In this embodiment, the bidirectional power device is a trench device, which may be a metal oxide semiconductor field effect transistor (MOSFET), an IGBT device or a diode. In the following, an N-type MOSFET is taken as an example for description, however, the present invention is not limited thereto.

[0057] exist figure 2 The bidirectional power device shown in the figure only contains a schematic diagram of the longitudinal structure of a cell structure, but in actual products, the number of cell structures can be one or more. See Figure 2- Figure 4 , the bidirectional power device includes a semiconductor layer 10, a trench 20 locat...

no. 2 example

[0080] This embodiment adopts basically the same technical scheme as the first embodiment. Compared with the first embodiment, this embodiment also includes a wiring layer 70 (not shown in the figure) and a plurality of metal solder balls on the wiring layer 70 80.

[0081] Since the pitch of the trenches 20 is very small, the gate electrodes drawn from the trench structure are relatively narrow, resulting in a large parasitic resistance. In order to reduce parasitic resistance, a wiring layer 70 is added above the bidirectional power device provided in the first embodiment.

[0082] Such as Figure 6 and Figure 7 As shown, the wiring layer 70 (not shown in the figure) is located on the surface of the bidirectional power device, and is used to form the first output of the first contact 61, the second contact 62, the third contact 63 and the fourth contact 64. The electrode S1, the second output electrode S2, the substrate electrode Sub and the gate electrode G are drawn ou...

no. 3 example

[0091] This embodiment adopts basically the same technical solution as the first embodiment, the difference is that in the first embodiment, the third contact 63 is formed on the first surface of the semiconductor layer 10, through the third contact hole 53, the third The lead region 101 is in contact with the semiconductor layer 10 to form a substrate electrode Sub. However, in this embodiment, the third contact 63 is formed on the second surface of the semiconductor layer 10, such as Figure 9 shown. Specifically, a bidirectional power device is formed on a substrate 1 with a higher doping concentration, and then a metal layer is evaporated on the backside of the substrate 1 to form a third contact 63 .

[0092] In the first embodiment, the gate, the substrate electrode, the first output electrode and the second output electrode of the bidirectional power device are drawn from the first surface of the semiconductor layer 10, which is suitable for chip scale packaging (CSP)....

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Abstract

The invention discloses a bidirectional power device and a manufacturing method thereof. The bidirectional power device comprises a semiconductor layer; a trench in the semiconductor layer; a gate dielectric layer which is positioned on the side wall of the trench; a control gate which is positioned in the trench and extends from the first surface of the semiconductor layer to the lower part of the trench, wherein the control gate and the semiconductor layer are separated by the gate dielectric layer. According to the invention, the control gate in the trench extends from a first surface of asemiconductor layer to a lower portion of the trench, and a source region and a drain region extend from the first surface of the semiconductor layer to overlap the control gate at the lower portion of the trench. The extending lengths of the source region and the drain region are greater, so that the source region and the drain region can bear a high voltage applied to the source region and the drain region in the longitudinal direction when the bidirectional power device is cut off, and the voltage withstanding characteristic of the bidirectional power device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a bidirectional power device and a manufacturing method thereof. Background technique [0002] Power devices are mainly used in high-power power supply circuits and control circuits, such as switching elements or rectifying elements. In power devices, doped regions of different doping types form a PN junction, thereby realizing the function of a diode or a transistor. Power devices are often used in applications that need to carry large currents at high voltages. On the one hand, in order to meet the demands of high-voltage applications and improve device reliability and lifetime, power devices need to have a high breakdown voltage. On the other hand, in order to reduce the power consumption and heat generated by the power device itself, the power device needs to have a low on-resistance. In the power supply circuit, charging and discharging are often invol...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/10H01L29/423H01L29/78H01L21/331H01L21/336
CPCH01L29/0684H01L29/1033H01L29/42316H01L29/78H01L29/7393H01L29/66325H01L29/66409H01L29/7834H01L29/4236
Inventor 张邵华
Owner HANGZHOU SILAN MICROELECTRONICS
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