Supercharge Your Innovation With Domain-Expert AI Agents!

APD protection method and circuit

A technology for protecting circuits and boosting circuits, applied in the field of circuits, can solve problems such as damage to APDs and easy exhaustion, and achieve the effect of improving reliability and preventing APDs from being damaged.

Active Publication Date: 2021-10-08
BENEWAKE BEIJING TECH CO LTD
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when a high-resistance target appears within the short-range measurement range of the lidar, or when the lidar is multi-aircraft, the APD is in a highly saturated working state, and the avalanche area is easily exhausted, thereby damaging the APD.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • APD protection method and circuit
  • APD protection method and circuit
  • APD protection method and circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0025] It should be clear that the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0026] One or more embodiments of the present invention provide an APD protection method for preventing APD oversaturation in a photodetection circuit using the APD as a main photodetector. Among them, APD (Avalanche Photodiode, avalanche photodiode) is a PN junction structure, the P region and N region are heavily doped, and the middle is doped with intrinsic semiconductor to form an avalanche region. The hole pairs are accelerated by the large electric field in the avalanche region and collide with other electron h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

One or more embodiments of the present invention provide an APD protection method and circuit. The APD protection method is applied to an APD protection circuit, and the APD protection circuit comprises a boost circuit, a photoelectric avalanche diode (APD), a transimpedance amplifier and a variable gain amplifier, wherein the output end of the boost circuit is connected with one end of the APD, the other end of the APD is connected with the input end of the transimpedance amplifier, and the output end of the transimpedance amplifier is connected with the input end of the variable gain amplifier. The method comprises the following steps: acquiring a signal output by the variable gain amplifier; determining a pulse width of the signal based on the signal; and controlling the boost circuit according to the pulse width so as to adjust the bias voltage of the APD. The APD protection method can effectively prevent the APD from being oversaturated.

Description

technical field [0001] The invention relates to the technical field of circuits, in particular to an APD protection method and a circuit. Background technique [0002] At present, most of the mainstream laser radars use the pulse ranging method, that is, one or a series of pulsed lasers are emitted, and the target is irradiated after being collimated by the optical antenna, and the reflected light is incident on the photodetector through the gain of the optical antenna. Because the reflected light energy is very weak, most of them use APD as the main photodetector. However, when a high-resistance target appears within the short-range measurement range of the lidar, or when multiple laser radars are fired at each other, the APD is in a highly saturated working state, and the avalanche area is easily exhausted, which in turn damages the APD. It can be seen that how to protect the APD from oversaturation is an urgent problem to be solved at present. Contents of the invention...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/32H02M3/156H02M9/04
CPCH02M1/32H02M3/156H03K3/57
Inventor 李鲲张海武疏达
Owner BENEWAKE BEIJING TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More