Method for reducing metal impurities of silicon wafer
A technology of metal impurities and silicon wafers, which is applied in the field of reducing metal impurities of silicon wafers, can solve the problems of metal impurities enrichment, affecting the accurate judgment of machine metal pollution, etc., and achieve the effect of improving accuracy
Pending Publication Date: 2021-10-15
HUA HONG SEMICON WUXI LTD
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, since the silicon wafer itself contains metal impurities, such as rapid heat treatment and other semiconductor manufacturing processes, not only will the metal ions in the atmosphere of the machine diffuse to the surface of the silicon wafer, but also the metal impurities in the silicon wafer will be enriched on the surface of the silicon wafer.
As a result, the test results include not only the metal pollution actually brought by the machine, but also the metal impurities of the silicon wafer, which affects the accurate judgment of the metal pollution actually brought by the machine
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0027] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0028] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for reducing metal impurities of a silicon wafer. The method is carried out before a device manufacturing process is carried out, and the method for reducing the metal impurities of the silicon wafer comprises the following steps: providing a silicon wafer body; the surface layer of the silicon wafer body is oxidized to form an oxide layer through a thermal annealing process, the oxide layer and the remaining silicon wafer body form a boundary layer, and metal impurities in the silicon wafer body are enriched towards the boundary layer; and the oxide layer including the boundary layer is removed, metal impurities contained in the remaining silicon wafer body are reduced, and the metal impurities of the silicon wafer can be reduced before the silicon wafer is subjected to metal element testing.
Description
technical field [0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for reducing metal impurities on a silicon wafer. Background technique [0002] Silicon wafers are the basic material of the semiconductor manufacturing industry. Since metal contamination on the silicon surface may lead to device function failure or poor reliability, it is extremely important to prevent metal contamination of silicon wafers in the semiconductor integrated circuit manufacturing process. [0003] Related technologies usually use ICPMS (elemental analysis instrument) to test the metal elements on the surface of silicon wafers. The test results will be used as an indispensable monitoring method in the silicon wafer manufacturing process, and also an important method and indicator to improve device performance. [0004] However, since the silicon wafer itself contains metal impurities, semiconductor manufactur...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324H01L21/66
CPCH01L21/324H01L22/12
Inventor 周星星郑刚张召
Owner HUA HONG SEMICON WUXI LTD