T-type double-channel transistor and manufacturing method thereof, and semiconductor device and manufacturing method thereof

Abstract

The embodiment of the invention provides a T-type double-channel transistor and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof, and the manufacturing method of the T-type double-channel transistor comprises the steps: providing a wafer which is provided with a plurality of transistor forming regions, wherein each transistor forming region is provided with a transistor column, each transistor column is provided with a first step side wall and a second step side wall which are relatively exposed in the first direction; forming a gate oxide layer with a step structure and a gate with a step structure on the side wall of the first step and the side wall of the second step in sequence respectively; forming a source electrode at the first end of the transistor column; forming a drain electrode at the second end of the transistor column, wherein the first end and the second end are the two opposite ends of the transistor column in the second direction respectively, the second direction is the thickness direction of the wafer, and the second direction is perpendicular to the first direction; and enabling the transistor column between the source electrode and the drain electrode to form a double-channel region of the T-shaped double-channel transistor.

Description

technical field [0001] The present application relates to the field of semiconductors, and relates to but not limited to a T-type double-channel transistor and a manufacturing method, a semiconductor device and a manufacturing method. Background technique [0002] Transistors are widely used as switching devices or driving devices in electronic equipment. For example, transistors can be used in Dynamic Random Access Memory (DRAM) to control the capacitance in each DRAM storage unit. [0003] In the related art, the structure of the transistor is mainly a planar transistor and a buried channel transistor, regardless of whether it is a planar transistor structure or a buried channel transistor structure, its source (Source, S) and drain (Drain, D) Both are located on the horizontal sides of the gate (Gate, G). In this structure, the source and the drain occupy different positions respectively, so that the area of ​​the transistor is relatively large. In addition, in the memo...

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Problems solved by technology

[0003] In the related art, the structure of the transistor is mainly a planar transistor and a buried channel transistor, regardless of whether it is a planar transistor structure or a buried channel transistor structure, its source (Source, S) and drain (Drain, D) Both are located on the horizontal sides of the gate (Gate, G). Under this structure, the source and drain occupy different positions respectively, making the area of ​​the transistor larger

In addition, in the memory device, the source and drain of the transistor will be connected to different structures after being formed. When the source and drain are located on the horizontal sides of the gate, it will easily lead to complicated circuit wiring inside the memory and difficult manufacturing process. Big

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