Parallel SiC-MoS drive circuit of servo system

A servo system and drive circuit technology, applied in emergency protection circuit devices, electrical components, high-efficiency power electronic conversion, etc., can solve problems such as limited performance improvement space, and achieve the effect of high reliability characteristics

Inactive Publication Date: 2021-10-15
BEIJING AUTOMATION CONTROL EQUIP INST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After long-term development of traditional silicon MoS devices, the performance improvement space is extremely limited, and they are facing strong impact in some high-end application fields

Method used

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  • Parallel SiC-MoS drive circuit of servo system
  • Parallel SiC-MoS drive circuit of servo system
  • Parallel SiC-MoS drive circuit of servo system

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Embodiment Construction

[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0019] The invention is a high-reliability and high-energy-efficiency servo system parallel SiC-MoS driving circuit. The drive circuit provides a hardware basis for the new topology of SiC-MoS devices, high-frequency high-speed switch drive control, real-time short-circuit fault isolation technology, high-frequency driver electromagnetic compatibility design, etc. The block diagram of hardware structure of the present invention is as figure 1 As shown, the hardware circuit includes six parts including a control signal unit, a power voltage source V, n SiC-MoS devices Q, n gate resistors R, n freewheeling diodes T, and n fuses S.

[0020] The connections between the parts are as figure 1 As shown, the power voltage source V is provided by the servo system to generate the rated current I required by the entire drive circuit; according to the working requireme...

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PUM

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Abstract

The invention discloses a parallel SiC-MoS driving circuit of a servo system. The parallel SiC-MoS driving circuit comprises a control signal unit, a power voltage source, n SiC-MoS devices, n grid resistors, n freewheel diodes and n fuses, wherein n is a parallel number; the power voltage is provided by a servo system, and rated current required by the whole driving circuit is generated; according to the working requirement of a servo system, the control signal unit sends out a control signal, the control signal passes through the n grid resistors and then drives the grid G ends of the n SiC-MoS devices, and the SiC-MoS devices are controlled to be switched on and switched off; the n SiC-MoS devices are connected in parallel to form n channels; the fly-wheel diode is connected in parallel with the SiC-MoS device of the corresponding channel, and load inverse peak energy is discharged through the fly-wheel diode loop; and the fuse is connected in series with the SiC-MoS device of the corresponding channel, and when the SiC-MoS device of the corresponding channel is in fault direct connection, the fuse is fused, the channel is cut off, and fault isolation is realized. The circuit can realize the excellent characteristics of high reliability, high energy efficiency and the like of the servo system.

Description

technical field [0001] This patent relates to a servo system drive circuit, in particular to a parallel SiC-MoS drive circuit for a servo system. Background technique [0002] With the rapid development of multi-electric and all-electric aircraft and electric drive servo systems, the reliability and efficiency of drive circuits have become the key factors restricting the performance of airborne and missile-borne servo systems in view of the long-term work of servo systems and limited energy. . The MoS device is used as the core component of the drive circuit of the servo system. After long-term development of traditional silicon MoS devices, the performance improvement space is extremely limited, and they are facing strong impact in some high-end application fields. Therefore, the new servo system drive circuit puts forward requirements for new materials and new topological forms for power devices. [0003] SiC material is listed as the third-generation semiconductor mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/088H02H7/20H02H7/12
CPCH02M1/088H02H7/1206H02H7/205Y02B70/10
Inventor 高炳东黄建王永乐吴真张紫君陈硕宋涛
Owner BEIJING AUTOMATION CONTROL EQUIP INST
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