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Semiconductor structure

A technology of semiconductor and gate structure, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.

Pending Publication Date: 2021-10-22
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While conventional backside power rail forming processes have been generally adequate for their intended purpose, they have not been satisfactory in every respect

Method used

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  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

Examples

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Embodiment Construction

[0067] The following content provides many different embodiments or examples for implementing different components of the embodiments of the present invention. Specific examples of components and configurations are described below to simplify embodiments of the invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if the description mentions that the first component is formed on the second component, it may include an embodiment where the first and second components are in direct contact, or it may include an additional component formed between the first and second components , such that the first and second components are not in direct contact. In addition, the embodiments of the present invention may repeat element symbols and / or letters in many examples. These repetitions are for the purposes of simplicity and clarity and do not in themselves imply a specific relationship between the various embodiments...

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Abstract

According to the embodiment of the invention, a semiconductor structure includes a bottom dielectric member on a substrate, a plurality of channel members directly over the bottom dielectric member, a gate structure surrounding each channel member, two first epitaxial members sandwiching the bottom dielectric member along a first direction, and two second epitaxial members sandwiching the plurality of channel members along the first direction.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor technology, and particularly to a backside power rail and a method for forming the same. Background technique [0002] Semiconductor integrated circuits (integrated circuits, ICs) have experienced exponential growth. Technological advances in integrated circuit (IC) materials and design have produced many generations of integrated circuits (ICs), with each generation of integrated circuits (ICs) having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits (ICs), functional density (e.g., interconnections per chip area number of devices) has generally increased. Such miniaturization processes generally provide benefits by increasing production efficiency and reducing associated costs. This miniaturization also increases the complexity of handling and manufacturing integrated circuits (ICs). [0003] For example, as integrated circuit (IC) t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L21/8234
CPCH01L27/0886H01L21/823475H01L21/823431H01L29/78696H01L29/42392H01L21/76897H01L23/5286H01L21/28518H01L21/0274H01L21/3086H01L21/30604
Inventor 苏焕杰游力蓁谌俊元邱士权庄正吉林佑明王志豪
Owner TAIWAN SEMICON MFG CO LTD