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Schottky diode with high surge capacity

A Schottky diode and surge capability technology, applied in the field of diodes, can solve problems such as increased conduction current and burnout of Schottky diodes, to reduce conduction voltage drop, optimize operating temperature, and improve surge capacity Effect

Inactive Publication Date: 2021-10-22
先之科半导体科技(东莞)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Insufficient surge capacity is a major technical bottleneck of Schottky diodes. Due to their insufficient surge capacity, the conduction current of Schottky diodes tends to increase rapidly during the working process, resulting in breakdown and burning of Schottky diodes. Bad

Method used

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  • Schottky diode with high surge capacity

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Embodiment Construction

[0021] In order to further understand the features, technical means, and specific objectives and functions achieved by the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] refer to Figure 1 to Figure 4 .

[0023] The embodiment of the present invention discloses a Schottky diode with high surge capability, such as figure 1 As shown, the die body 10 and the conductive slab 20, the conductive slab 20 is located at the bottom of the die body 10, the thickness of the die body 10 is p, the thickness of the conductive slab 20 is d, 0.5p<d<p, It can ensure that the conductive slab 20 has sufficient thickness to realize heat conduction release, especially ensure that the conductive slab 20 can transfer heat outward from the surrounding sides, thereby significantly improving the heat dissipation performance of the overall device;

[0024] Die body 10 comprises the N-typ...

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Abstract

The invention provides a Schottky diode with high surge capacity, which comprises a tube core body and a conductive thick sheet. The thickness of the tube core body is p, the thickness of the conductive thick sheet is d, and d is more than 0.5 p and less than p; the tube core body comprises an N-type substrate, a cathode metal layer is arranged on the N-type substrate, an N-type epitaxial layer is arranged below the N-type substrate, an anode metal layer is arranged on one side of the N-type epitaxial layer, a plurality of emitter trenches which are arranged at equal intervals are formed in the side, close to the anode metal layer, of the N-type epitaxial layer, and the N-type epitaxial layer is filled with a P-type injection region with high doping concentration; a P-type transition region with low doping concentration is connected between the P-type injection region and the emitter trench, a first passivation layer is connected between the N-type epitaxial layer and the conductive thick sheet, and the first passivation layer surrounds the anode metal layer. According to the invention, the generated heat can be efficiently transmitted to the conductive thick sheet, so that the surge capacity can be effectively improved; and the Schottky junction and the PN junction are matched, so that the conduction voltage drop can be reduced, and the problems of burnout and the like are not easy to occur.

Description

technical field [0001] The invention relates to a diode, and specifically discloses a Schottky diode with high surge capability. Background technique [0002] A Schottky diode is a metal-semiconductor device with rectification characteristics made of a noble metal as the positive pole and an N-type semiconductor as the negative pole, using the Schottky junction formed on the contact surface of the two, that is, the Schottky barrier. When a forward voltage is applied, the Schottky junction becomes narrower and the internal resistance becomes smaller, and when a reverse voltage is applied, the Schottky junction becomes wider and the internal resistance becomes larger. [0003] Insufficient surge capacity is a major technical bottleneck of Schottky diodes. Due to insufficient surge capacity, the conduction current of Schottky diodes tends to increase rapidly during operation, causing the Schottky diodes to be broken down and burned. Bad. Contents of the invention [0004] B...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L23/367H01L23/31H01L29/41
CPCH01L29/872H01L23/3171H01L23/3677H01L29/41
Inventor 郑容芳
Owner 先之科半导体科技(东莞)有限公司
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