Red light diode chip capable of improving electrode adhesion quality and preparation method thereof

Abstract

The invention provides a red light diode chip capable of improving electrode adhesion quality and a preparation method thereof, which belong to the technical field of light emitting diodes. A primary p electrode communicated with a p welding spot is located on the silicon oxide bonding layer, the surface, away from the substrate, of the primary p electrode is flush with the surface, away from the substrate, of the silicon oxide bonding layer, and the insulated silicon oxide bonding layer supports the epitaxial structure and the primary p electrode. The epitaxial structure on the p electrode and the silicon oxide bonding layer can be kept in a relatively complete state and is not easy to damage. The p welding spot communicated with the primary p electrode and the n welding spot communicated with the primary n electrode are added, the electrodes and the welding spots made of metal materials have good stress resistance and are difficult to damage, stable connection between the epitaxial structure and the electrodes and the welding spots is guaranteed, and the electrode adhesion quality is improved so as to improve the preparation yield of the obtained red light diode chip.

Description

technical field [0001] The disclosure relates to the technical field of light-emitting diodes, in particular to a red light-emitting diode chip that improves electrode adhesion quality and a preparation method thereof. Background technique [0002] Red light emitting diode is a common light source device, which is widely used in remote control, vehicle sensing, closed circuit television, etc., and red light emitting diode chip is the basic structure for preparing red light emitting diode. [0003] Red light emitting diode chips usually include epitaxial wafers and p, n solder joints. The epitaxial wafer includes a support substrate and a p-GaP window layer, p-AlInP confinement layer, multiple quantum well layer, n-AlInP confinement layer, n-AlGaInP current spreading layer, protective layer and Bragg reflection layer stacked on the support substrate in sequence. The mirror, the p soldering point and the n soldering point are respectively connected to the p-GaP window layer a...

AI Technical Summary

Problems solved by technology

Since the groove is usually etched from the p-GaP window layer to a certain depth, the thickness of the p-GaP window layer at the position connected to the p solder joint is thinner, and the material of the p-GaP window layer itself is relatively brittle, so the p- In the process of soldering the GaP window layer to the supporting substrate, the p-GaP window layer is prone to damage, resulting in poor contact between the p-GaP window layer and the p solder joint, and the problem that the chip does not emit light

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