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Electrode coplanar LED substrate and preparation method thereof

An LED substrate and electrode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of P and N electrodes on the same substrate, and achieve the effect of improving luminous efficiency and increasing light output power

Pending Publication Date: 2021-11-02
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are still some problems in the more advanced embedded electrode structure chip, because the low-resistance silicon substrate with extremely simple structure is used, and the P and N-type electrodes cannot be made on the same substrate, so that the P-type electrode can only be made on the chip. The upper surface, that is, the P-type electrode and the N-type electrode are respectively located on the top and bottom surfaces of the chip. The P-type electrode on the top makes the chip sacrifice a certain area of ​​light-emitting area and the P-type electrode will also block part of the light. Therefore, the light output efficiency of the LED There is still room for improvement. How to improve the position of the P-type electrode structure without losing the light-emitting area of ​​the active area, that is, to design a more reasonable embedded LED chip substrate is a technical difficulty.

Method used

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  • Electrode coplanar LED substrate and preparation method thereof
  • Electrode coplanar LED substrate and preparation method thereof
  • Electrode coplanar LED substrate and preparation method thereof

Examples

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Embodiment 1

[0030] see figure 1 , the present embodiment provides an electrode coplanar LED substrate, comprising: an insulating substrate 110; a P-type lead-out electrode 112 and an N-type lead-out electrode 113 penetrating through the insulating substrate 110; The conductive adhesive layer 111. In this embodiment, the insulating substrate 110 is a high-resistance Si substrate with a thickness of 400 μm. The conductive adhesive layer 111 has a thickness of 8 μm and is made of Au. The material of the P-type lead-out electrode 112 and the N-type lead-out electrode 113 is Cu, and a metal seed layer with a thickness of 2000 Å is provided on the surface thereof, and the material of the metal seed layer is Au. The preparation method of the electrode coplanar LED substrate comprises the following steps:

[0031] (1) Take a high-resistance silicon wafer substrate 110 with a thickness of 400 microns, and use a deep silicon etching process to carve a plurality of deep holes with a depth of 120 ...

Embodiment 2

[0039] see Figure 2-5 , this embodiment provides an electrode coplanar LED chip, comprising the electrode coplanar LED substrate with the structure described in Embodiment 1 and figure 2 The LED chip of the structure shown. The structure of the LED chip is as figure 2 As shown, it includes first adhesive layer 107, columnar P electrode 109, columnar N electrode 108, insulating layer 106, P contact mirror metal and protective layer 105, P-type GaN layer 104, InGaN / GaN Multiple quantum well layer 103 , n-type GaN layer 102 , growth substrate 101 . The embedded columnar N electrode 108 radially penetrates the insulating layer 106 from top to bottom, the P-type GaN layer 104 and the InGaN / GaN multi-quantum well layer 103, and finally penetrates into the n-type GaN layer 102 and forms an ohmic contact with it; the insulating layer 106 goes deep into the Insulation protection is formed on the inner wall of the columnar N electrode 108 to the aperture; the top of the columnar P...

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Abstract

The invention provides an electrode coplanar LED substrate and a preparation method thereof. The electrode coplanar LED substrate comprises an insulating substrate; a P-type extraction electrode and an N-type extraction electrode which penetrate through the insulating substrate; and a conductive bonding layer which is positioned on one side of the insulating substrate. The preparation method comprises the following steps of: preparing an electrode channel penetrating through the insulating substrate on the insulating substrate; forming a P-type extraction electrode I and an N-type extraction electrode I in the electrode channel; and forming a bonding layer on one side of the insulating substrate. According to the preparation method, the electrodes of the LED chip can be prepared on the same side, the loss of a part of light-emitting area caused by the conventional electrode manufacturing is avoided, and the light output power of the chip is effectively improved.

Description

technical field [0001] The invention relates to the technical field of LED manufacturing, in particular to an electrode coplanar LED substrate and a preparation method thereof. Background technique [0002] With the continuous expansion of the market share of LED lighting, the requirements for lighting performance such as LED light efficiency are getting higher and higher. From ordinary household lighting fixtures to street lamps and headlight systems that require higher power, the market demand for high-power The demand for large-sized or even super-sized LED chips is becoming more and more mainstream. The first problem faced by ultra-high power and ultra-large-sized LEDs is the current crowding. Compared with chips with traditional structures, embedded electrode structure LED chips have many advantages: better current expansion, better conductivity, better heat dissipation and higher light extraction rate. [0003] At present, there are still some problems in the more ad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/40H01L33/20H01L33/00
CPCH01L33/382H01L33/40H01L33/20H01L33/0066H01L33/0075H01L2933/0016
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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