High-miniaturization L-waveband 900W GaN power amplification module

A power amplifier module and L-band technology, applied in the field of highly miniaturized L-band 900W GaN power amplifier module, can solve the problems of size reduction, power only 500W, complex structure, etc., to reduce insertion loss, increase isolation, The effect of size reduction

Pending Publication Date: 2021-11-02
NANJING SANLE GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

2. Three years ago, a power module in the form of internal matching appeared, with a power of 400W to 500W. The size has been qualitatively reduced, but the power is only 500W
Coupled with the peripheral power supply circuit of the two modules, the structure is still relatively complicated

Method used

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  • High-miniaturization L-waveband 900W GaN power amplification module
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  • High-miniaturization L-waveband 900W GaN power amplification module

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Embodiment

[0032] Example: such as Figure 1-11 As shown, a highly miniaturized L-band 900W GaN power amplifier module of the present invention includes a GaN power tube 1, and one side of the GaN power tube 1 is sequentially provided with a first leakage voltage 2, an output interface 3 and a second leakage voltage 4 , the other side of the GaN power transistor 1 is provided with a first grid voltage 5, an input interface 6, and a second grid voltage 7 in sequence, and the size of the GaN power transistor 1 is 46.8mm×38.5mm×7.4mm, and the GaN power There is a chip die inside the tube 1, and the chip die is a 300W GaN power chip. The internal impedance value of the chip chip needs to match the input and output to a pure 50, and the internal power of the GaN power tube 1 is 900W. According to S(6, 6) is the matching coefficient of 300 power chips, and S(10, 10) is the matching coefficient of 40W. worse stability;

[0033] Under the same power, the narrower the bandwidth of the frequency...

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Abstract

The invention discloses a high-miniaturization L-waveband 900W GaN power amplification module which comprises a GaN power tube, a first drain voltage, an output interface and a second drain voltage are sequentially arranged on one side of the GaN power tube, a first grid voltage, an input interface and a second grid voltage are sequentially arranged on the other side of the GaN power tube, the size specification of the GaN power tube is 46.8 mm*38.5 mm*7.4 mm, the high-miniaturization L-waveband 900W GaN power amplification module comprises a GaN power tube, a bare chip is arranged in the GaN power tube, the bare chip is a 300W GaN power chip, the input and output of the internal impedance value of the bare chip are matched to be pure 50, and the high-miniaturization L-waveband 900W GaN power amplification module has the advantages of simple equipment structure, novel design, high power, high efficiency, small size and light weight.

Description

technical field [0001] The invention relates to the technical field of third-generation radio frequency band GaN power semiconductor circuits, in particular to a highly miniaturized L-band 900W GaN power amplifier module. Background technique [0002] The working frequency band of this patent is 980MHz to 1215MHz, and the semiconductor power circuits of this frequency band are widely equipped in the data link systems of warships and aircrafts. In the past, the power requirement was low, around 250W. Now the power demand has reached 800W. 5 or 6 years ago, it was mainly circuit board-level power circuits, with a power of 600W to 700W, but the size was very large. Even if it is further optimized, it is estimated to be reduced to about 100mm×50mm. 2. Three years ago, a power module in the form of internal matching appeared, with a power of 400W to 500W. The size has been qualitatively reduced, but the power is only 500W. The two can meet the demand of 900W, but the volume is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/48H03F1/56H03F3/195H03F3/213
CPCH03F1/56H03F1/486H03F3/195H03F3/213H03F2200/451
Inventor 刘坤
Owner NANJING SANLE GROUP
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