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High-voltage semiconductor device and related power supply

A technology of power supply and semiconductor, which is applied in the direction of semiconductor devices, electric solid state devices, output power conversion devices, etc.

Pending Publication Date: 2021-11-09
LEADTREND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

output power V OUT possibly as low as 5V

Method used

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  • High-voltage semiconductor device and related power supply
  • High-voltage semiconductor device and related power supply
  • High-voltage semiconductor device and related power supply

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Experimental program
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Effect test

Embodiment Construction

[0064] In this specification, there are some identical symbols, which represent elements having the same or similar structures, functions, and principles, and those with general knowledge in the industry can infer them according to the teachings of this specification. For the sake of brevity of the description, elements with the same symbols will not be repeated.

[0065] In an embodiment of the present invention, one or two enhancement mode MOS field effect transistors and a depletion mode JFET junction field effect transistor are integrated on a single chip.

[0066] One of the two enhancement mode MOS field effect transistors is used as a main power switch in a power supply, and the other is used as a current sampling switch, which can increase the conversion efficiency of the power supply.

[0067] The JFET junction field effect transistor can be used as a high-voltage startup switch in the power supply, in addition to improving the conversion efficiency, it may also reduc...

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PUM

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Abstract

The invention discloses a high-voltage semiconductor device and a related power supply. The semiconductor device comprises a first transistor, a second transistor, a third transistor, a high-voltage pin, a control gate pin, a main source pin, a sampling pin, a charging pin and a charging control pin, wherein the first transistor and the second transistor are vertical elements and are respectively provided with a source end, a gate end and a drain end; the source end of the first transistor is electrically connected to the main source pin; the source end of the second transistor is electrically connected to the sampling pin; the gate ends of the first transistor and the second transistor are electrically connected to the control gate pin; the third transistor is a vertical JFET (Junction Field Effect Transistor) and is provided with a source end, a control end and a drain end; the source end of the third transistor is electrically connected to the charging pin; the control end of the third transistor is electrically connected to the charging control pin; and the drain ends of the first transistor, the second transistor and the third transistor are electrically connected to the high-voltage pin.

Description

technical field [0001] The present invention relates to switching power converters, and more particularly to semiconductor devices and related power converters with current sampling and high voltage startup structures. Background technique [0002] figure 1 A power converter 100 with a flyback structure is shown, which is used to convert the input power V of the primary side IN converted to secondary side output supply V OUT . Input power V IN Possibly up to 260V, generated by rectification of the mains. Output power V OUT Possibly as low as 5V. [0003] The pulse width modulation controller 102 controls the power switch NS through the gate output pin GATE, which is connected to the input power supply V in series with the inductor LP and the current detection resistor RCS IN between the ground wire. Through the current detection pin CS, the PWM controller 102 can detect the current flowing through the power switch NS, and generate an appropriate pulse signal to contr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/335H02M1/32H01L27/06
CPCH02M3/33569H02M3/33523H02M1/32H01L27/06
Inventor 李振宏陈汉玮
Owner LEADTREND TECH