Magnetic memory device reading circuit

Abstract

The invention provides a magnetic memory device reading circuit. The magnetic memory device reading circuit comprises: a current source type MTJ state extraction circuit, which is connected with the magnetic memory device and is used for outputting working current of the magnetic memory device; an intermediate-stage current source amplification circuit, which is connected with the current source type MTJ state extraction circuit and is used for amplifying the working current and outputting an amplified current; a sensitive amplifier, which is connected with the intermediate-stage current source amplification circuit and is used for generating corresponding output current according to the control of the amplification current, wherein the output current corresponds to the storage state of the magnetic storage device; and a comparison circuit, which is connected with the sensitive amplifier and is used for determining the storage state of the magnetic storage device according to the output current. The magnetic memory device reading circuit has the advantages of being high in reading speed, high in sensitivity, wide in applicability, easy to integrate, high in accuracy and the like.

Description

technical field [0001] The invention belongs to the field of application circuits of magnetic storage devices, and in particular relates to a reading circuit of magnetic storage devices. Background technique [0002] With the continuous development of semiconductor technology, static power consumption caused by transistor leakage current has become an urgent problem to be solved, and magnetic memory devices have become an excellent choice to solve this problem because of their characteristics of saving data under power-off conditions . Magnetic Random Access Memory (MRAM) based on Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) has the advantages of high-speed reading and writing, low power consumption and unlimited erasing and writing, so it is expected to become the next generation of general-purpose magnetic storage devices . [0003] The read discrimination circuit of the magnetic storage device has become an indispensable part in its application process. Mag...

AI Technical Summary

Problems solved by technology

The current reading circuit of magnetic storage devices is generally implemented by sensitive amplifiers, but although this solution has the obvious advantages of simple circuit structure, it is not satisfactory in terms of circuit reliability and sensitivity.

Considering the process deviation of semiconductor devices and magnetic memory devices, the circuit often has read errors, especially when the resistance value difference between the two storage states of the magnetic memory device is small, the circuit will be difficult to identify

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