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Grid line gap patterning method of 3D memory device and exposure mask

A storage device and mask technology, applied in the field of exposure masks, can solve the problems of differences between mask patterns and photoresist patterns, etc.

Pending Publication Date: 2021-11-12
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the mask pattern differs from the photoresist pattern due to the diffraction effect of the optical system

Method used

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  • Grid line gap patterning method of 3D memory device and exposure mask
  • Grid line gap patterning method of 3D memory device and exposure mask
  • Grid line gap patterning method of 3D memory device and exposure mask

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Embodiment Construction

[0037] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0038] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0039] If it is to describe the situation directly on another layer or an...

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PUM

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Abstract

The invention discloses a grid line gap patterning method of a 3D memory device and an exposure mask. The 3D memory device includes a structural feature having an end portion. The exposure mask includes: a substrate; and a mask pattern located on the substrate, wherein the mask pattern comprises a feature pattern corresponding to the structural feature and a sub-resolution auxiliary pattern adjacent to the feature pattern, the sub-resolution auxiliary pattern at least partially surrounding an end corner of the feature pattern to optimize an end shape of the structural feature. In the 3D memory device, the storage density and the reliability of the grid line gap obtained by adopting the exposure mask can be improved due to the optimization of the shape of the end part.

Description

technical field [0001] The present invention relates to the manufacturing technology of the memory, more specifically, to the patterning method and the exposure mask of the gate line gap of the 3D memory device. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] In the manufacturing method of the 3D memory, multiple patterning processes are used to form the structural features of ch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/033H01L27/11521H01L27/11551H01L27/11568H01L27/11578H10B41/20H10B41/30H10B43/20H10B43/30
CPCH01L21/0274H01L21/0334H10B41/20H10B41/30H10B43/20H10B43/30
Inventor 张昆张雷郭亚丽
Owner YANGTZE MEMORY TECH CO LTD