Method for making semiconductor device

A technology for semiconductors and devices, applied in the field of semiconductor devices and their manufacturing, can solve problems such as increasing the number of process steps

Inactive Publication Date: 2004-01-28
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires an additional photolithography process, resulting in a problem of increased number of process steps

Method used

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  • Method for making semiconductor device
  • Method for making semiconductor device
  • Method for making semiconductor device

Examples

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Embodiment Construction

[0025] Hereinafter, an embodiment of a method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to related drawings.

[0026] figure 2 Figure 6 A method of manufacturing a semiconductor device according to the present invention is shown.

[0027] In these drawings, figure 2 (a) represents a first step whereby a polysilicon film 203 and an insulating film 204 are formed on a semiconductor substrate 201, and then the polysilicon film 203 and the insulating film 204 are etched into a predetermined shape to form a gate electrode 203, and thereafter, the An etching stopper film 205 and an interlayer insulating film 206 are formed on the entire surface thereof.

[0028] figure 2 (c) represents a second step whereby a contact hole 208 reaching the semiconductor substrate is formed in the interlayer insulating film 206 so as to expose the etching stopper film 205 on the semiconductor substrate.

[0029] im...

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PUM

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Abstract

In a method for fabricating a semiconductor device, this method comprising the steps of: forming a contact hole (208) so as to cause the etching stopper (205) on the substrate (201) to be exposed; removing an exposed etching stopper (205) on the substrate; filling the contact hole (208) to form a contact plug (210); removing a film (209) that is deposited on the interlayer insulation film (206), so as to expose the contact plug (210); etching the interlayer insulation film (206) and removing the etching stopper (205) on the gate electrode (203); forming an interlayer insulation film (211); etching the interlayer insulation film (211) so as to expose the etching stopper (205) on a diffusion layer (231) and etching the insulation film (204) of the gate electrode (203), so as to form contact holes (213) on the diffusion layer (231) and the gate electrode (203); removing the etching stopper (205) exposed on the diffusion layer (231); and filling the contact hole (213), so as to form the contact plugs (215).

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly to a semiconductor device freed from over-corrosion and having stable transistor characteristics and a method of manufacturing the same. Background technique [0002] Among interconnection techniques for forming contacts in semiconductor devices using a self-alignment process, particularly a method of forming a self-alignment contact using an etch stop film composed of a silicon nitride film has been accompanied by the following problems in the past. [0003] FIG. 8 is a cross-sectional view illustrating the process of applying a general self-aligned contact process to a memory device. [0004] As shown in FIG. 8(a), a gate electrode 403 and an insulating film 404 made of a silicon nitride film are formed on a silicon substrate 401 and an element isolation region 402, and then a silicon nitride film 405 serving as an etc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302H01L21/3065H01L21/60H01L21/768H01L21/8234H01L27/088H10B12/00H10B99/00
CPCH01L21/76897H01L27/1052H01L27/10888H01L27/10894H01L21/8239H10B12/485H10B12/09H01L21/28H10B99/00
Inventor 祐川光成
Owner NEC ELECTRONICS CORP
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