System and method for monitoring reaction atmosphere in chemical vapor deposition process

A technology of chemical vapor deposition and monitoring system, applied in the field of monitoring system of reaction atmosphere in chemical vapor deposition process, can solve problems affecting product performance, toxicity, material cross-section stratification, etc., to improve product quality, avoid temperature field oscillation, The effect of reducing production uncertainty

Active Publication Date: 2021-11-23
江苏鎏溪光学科技有限公司
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Problems solved by technology

Especially in long-term deposition production, if the evaporation of Zn is not adjusted in time, it will lead to delamination of the material section and seriously affect the performance of the product
In addition, during the production of ZnS (ZnSe) by chemical vapor deposition, the chemical vapor deposition furnace is a closed space, and the temperature of the crucible and the reaction chamber are relatively high, and the H 2 S(H 2 Se) gas has certain toxicity, and sealing and safety need to be considered

Method used

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  • System and method for monitoring reaction atmosphere in chemical vapor deposition process
  • System and method for monitoring reaction atmosphere in chemical vapor deposition process

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.

[0030] refer to figure 1 Shown, an embodiment of the monitoring system of reaction atmosphere in the chemical vapor deposition process of the present invention comprises chemical vapor deposition furnace 1, and chemical vapor deposition furnace has reaction chamber 2, and reaction chamber top is connected with vacuum pipe 3, and reaction chamber bottom is connected with vacuum pipeline 3. The Zn raw material crucible 4 is connected, the chemical vapor deposition furnace is also provided with a carrier gas pipeline and a mixing pipeline, the vacuum pipeline is connected to the sample chamber 6 through the sampling pump 5, and the sample chamber is also connected to the dilution pipe...

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Abstract

The invention discloses a system for monitoring reaction atmosphere in a chemical vapor deposition process. The system comprises a chemical vapor deposition furnace, the chemical vapor deposition furnace is provided with a reaction chamber, the top of the reaction chamber is connected with a vacuum pipeline, the bottom of the reaction chamber is connected with a Zn raw material crucible, the vacuum pipeline is connected with a sample chamber through a sampling pump, the sample chamber is further connected with a dilution pipeline, a vacuum pump and a gas analyzer, one end of the vacuum pump is further connected with the vacuum pipeline, the gas analyzer, the sampling pump and the vacuum pump are all connected with a controller, and the controller is connected with a computer. The invention further discloses a monitoring method. The flow of raw material carrier gas introduced into the Zn crucible is changed by detecting the concentration of H2S or H2Se in the reaction residual gas. According to the system and the method, the consistency of the raw material ratio in the reaction space in the long-time deposition production process can be ensured, and the system is safe and reliable, so that high-quality optical materials can be produced.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a monitoring system and method for reaction atmosphere during chemical vapor deposition. Background technique [0002] Chemical vapor deposition technology is widely used in microelectronic devices, optoelectronic devices and surface engineering, and is one of the most important methods for preparing functional materials, structural materials and nanomaterials. The chemical vapor deposition process is very complex, including thermodynamics, chemical reaction kinetics, heat and mass transfer, etc. The description of a chemical vapor deposition system should include the temperature distribution of each point in the reactor space, the flow field distribution and the space. The type and concentration distribution of substances, etc. [0003] ZnS and ZnSe are two important infrared optical materials, and chemical vapor deposition technology is currently the mainstre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/30
CPCC23C16/52C23C16/306Y02P70/50
Inventor 张树玉甄西合徐悟生朱逢旭邰超赵丽媛
Owner 江苏鎏溪光学科技有限公司
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