Positive electrode for lithium secondary battery, and lithium secondary battery including same
A lithium secondary battery and cathode technology, applied in the field of lithium secondary batteries, can solve problems such as limited effects, minimize the increase in battery resistance, improve storage stability, and maintain capacity retention.
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Embodiment 1
[0107] The atomic layer deposition step was performed in the same manner as Comparative Example 2, but the injection time of the precursor, the reaction gas, and the purge gas and the number of times the atomic layer deposition process were different. Trimethyl aluminum (Al (CH) 3 ) 3 The injection time is set to 0.5 seconds, and after 10 seconds of the AR which is used as an inert gas, water vapor is supplied for 1 second to substituize aluminum methyl aluminum with OH. Subsequently, by purging the additional 20 seconds using Ar, the impurities and unreacted ingredients in the system are purged. The atomic layer deposition process was repeated for 5 to manufacture a positive electrode having a thickness of about 0.55 nm formed on the surface of the positive electrode active material layer.
Embodiment 2
[0109] The atomic layer deposition step was performed in the same manner as Comparative Example 2, but the injection time of the precursor, the reaction gas, and the purge gas and the number of times the atomic layer deposition process were different. Trimethyl aluminum (Al (CH) 3 ) 3 The implantation time is set to 2 seconds, and after 50 seconds of the AR which is used as an inert gas, water vapor is supplied for 2 seconds to substituize aluminum methyl aluminum with an OH. Subsequently, by purging for another 50 seconds as an an inert gas, the impurities and unreacted ingredients in the system are removed. The atomic layer deposition step was repeated twice to fabricate the positive electrode of the alumina coating having a thickness of about 0.24 nm on the surface of the positive electrode active material layer.
Embodiment 3
[0111] The atomic layer deposition step was performed in the same manner as Comparative Example 2, but the injection time of the precursor, the reaction gas, and the purge gas and the number of times the atomic layer deposition process were different. Trimethyl aluminum (Al (CH) 3 ) 3 The implantation time is set to 2 seconds, and after 50 seconds of the AR which is used as an inert gas, water vapor is supplied for 2 seconds to substituize aluminum methyl aluminum with an OH. Subsequently, by purging for another 50 seconds as an an inert gas, the impurities and unreacted ingredients in the system are removed. The atomic layer deposition process was repeated 7 times to manufacture a positive electrode having a thickness of about 0.84 nm formed on the surface of the positive electrode active material layer.
[0112] The cross-sectional electron microscope image of the positive electrode having the prepared atomic layer deposited coating and the elemental mapping image of aluminum me...
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