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Evaporative PECVD coating device

A coating device and evaporative technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of expensive, highly toxic, unsuitable for large-scale use, etc., to increase temperature and reduce heat Effects of radiation and cost reduction of gas raw materials

Inactive Publication Date: 2021-12-10
YANCHENG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, some metal gases will be used, which are expensive and highly toxic, and are not suitable for large-scale use

Method used

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  • Evaporative PECVD coating device

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preparation example Construction

[0058] The invention provides a method for preparing a ZnO thin film using an evaporative PECVD device, including:

[0059] Step (1): the cleaned sample is placed on the substrate 2; zinc acetate dihydrate (10g) is placed in the crucible of the evaporation source;

[0060] Step (2): Turn on the main control switch of the device; turn on the vacuum pump to evacuate the chamber until 5×10 -4 Pa;

[0061] Step (3): Pass in an inert gas (Ar gas), turn on the ion source, and clean the entire chamber and sample surface;

[0062] Step (4): matching the frequency and voltage of the ion source to generate stable plasma;

[0063] Step (5): Turn on the substrate heating unit 3 to make the substrate 2 reach the reaction temperature (350°C); turn on the heating and holding zone 5 to heat to make the temperature reach 250°C;

[0064] Step (6): After the substrate 2 reaches the reaction temperature, the evaporation source 4 is heated to 200° C. to evaporate zinc acetate dihydrate and ente...

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Abstract

The invention discloses an evaporative PECVD coating device. The evaporative PECVD coating device comprises a substrate, a substrate heating unit, an evaporation source, a heating and heat preservation unit, a gas inlet unit and a plasma glow area. The substrate is used for depositing a coating sample. The substrate heating unit is arranged at the bottom of the substrate and used for heating the substrate. The evaporation source is arranged on one side of the substrate, metal salt is placed inside the evaporation source, and the metal salt is subjected to thermal evaporation, so that metal salt gas is generated. The heating and heat preservation unit is arranged above the substrate and is used for heating the metal salt gas and preserving the heat. The gas inlet unit communicates with the heating and heat preservation unit and is used for feeding reaction gas and inert gas. The plasma glow area is formed between the substrate and the heating and heat preservation unit and is used for generating plasma-state free radical groups and active atoms.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and in particular relates to an evaporative PECVD coating device. Background technique [0002] Chemical vapor deposition (CVD) is the direct use of various gases or through other means to transform substances into gases, allowing one or more gases to decompose, reduce or Other processes that react and form solids. At present, CVD is usually classified according to the reaction type or pressure, mainly including low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), subatmospheric pressure CVD (SACVD), ultrahigh vacuum CVD (UHCVD), plasma enhanced CVD (PECVD) , High Density Plasma CVD (HDPCVD), Rapid Thermal CVD (RTCVD) and Metal Organic CVD (MOCVD), etc. [0003] Among them, plasma-enhanced chemical vapor deposition (PECVD) is a process in which free radicals and active atoms in plasma are generated by discharge, and these radicals and atoms form a film on a low-temperat...

Claims

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Application Information

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IPC IPC(8): C23C16/50C23C16/54C23C16/40
CPCC23C16/50C23C16/54C23C16/407
Inventor 张运祥张勤芳王仲杰陈霄侯海军戴海璐刘超
Owner YANCHENG INST OF TECH