Mini LED wafer appearance defect detection system and method

Abstract

The invention discloses a Mini LED wafer appearance defect detection system and a Mini LED wafer appearance defect detection method, relates to the technical field of defect detection, and solves the technical problem that in the prior art, the optical detection precision and efficiency of a wafer cannot be considered at the same time, so that full detection cannot be realized. The method comprises the steps of analyzing the defect data of the wafer through a defect analysis unit so as to detect the defects, acquiring the defect data of the wafer, acquiring a defect analysis coefficient Xi of the wafer through a formula, if the defect analysis coefficient Xi of the wafer is greater than or equal to a defect analysis coefficient threshold value, judging that the corresponding wafer has a defect, generating a wafer defect signal and sending the wafer defect signal to a cloud detection platform, and after the cloud detection platform receives the wafer defect signal, marking the wafer as a defective wafer, then generating a matching signal, and sending the matching signal and the defective wafer to a detection matching unit. According to the present invention, defect analysis is carried out on the wafer, and the accuracy of defect detection is improved, so that the working efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of defect detection, in particular to a system and method for detecting defects on the appearance of Mini LED wafers. Background technique [0002] With the continuous innovation and development of the display technology of smart devices, the requirements for screen resolution are getting higher and higher, and Mini LED array devices have emerged as the times require. Compared with conventional LEDs, the size of Mini LEDs is further reduced, and the manufacturing process is more complicated, so the requirements and difficulty of testing Mini LEDs will be further increased. Since the size of Mini LED is generally 100μm-200μm, while the size of conventional LED is generally larger than 1000μm, the detection optical resolution of the current automatic detection system for conventional LED appearance defects cannot meet the detection requirements of Mini LED; the current detection of Mini LED appearance defects ...

AI Technical Summary

Problems solved by technology

Compared with conventional LEDs, the size of Mini LEDs is further reduced, and the manufacturing process is more complicated, so the requirements and difficulties for the detection of Mini LEDs will be further increased

Since the size of Mini LED is generally 100μm-200μm, while the size of conventional LED is generally larger than 1000μm, the detection optical resolution of the current automatic detection system for conventional LED appearance defects cannot meet the detection requirements of Mini LED; the current detection of Mini LED appearance defects Most of the manual detection methods using microscopes generally have shortcomings such as low detection efficiency that cannot meet production capacity requirements, manual detection is prone to fatigue, resulting in uneven detection results, and human errors leading to inconsistent standards.

[0003] However, in the existing technology, the optical inspection accuracy and efficiency of the wafer cannot be balanced, resulting in the technical problem of inability to fully inspect

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